Direct observation of stress relaxation process in 4H-SiC homoepitaxial layers via in-situ synchrotron X-ray topography
(2018)
Conference Proceeding
Guo, J., Yang, Y., Raghothamachar, B., Dudley, M., Welt, S., Danilewsky, A., …Tanner, B. (2018). Direct observation of stress relaxation process in 4H-SiC homoepitaxial layers via in-situ synchrotron X-ray topography. In R. Stahlbush, P. Neudeck, A. Bhalla, R. Devaty, M. Dudley, & A. Lelis (Eds.), Silicon Carbide and Related Materials 2017 (176-179). https://doi.org/10.4028/www.scientific.net/msf.924
In-situ synchrotron X-ray topography observation of double-ended Frank-Read sources in PVT-grown 4H-SiC wafers (2018)
Conference Proceeding
Yang, Y., Guo, J., Raghothamachar, B., Dudley, M., Welt, S., Danilewsky, A., …Tanner, B. (2018). In-situ synchrotron X-ray topography observation of double-ended Frank-Read sources in PVT-grown 4H-SiC wafers. In R. Stahlbush, P. Neudeck, A. Bhalla, R. Devaty, M. Dudley, & A. Lelis (Eds.), Silicon Carbide and Related Materials 2017 (172-175). https://doi.org/10.4028/www.scientific.net/msf.924
Nondestructive, In Situ Mapping of Die Surface Displacements in Encapsulated IC Chip Packages Using X-Ray Diffraction Imaging Techniques (2017)
Conference Proceeding
Gorji, N., Tanner, B., Vijayaraghavan, R., Danilewsky, A., & McNally, P. (2017). Nondestructive, In Situ Mapping of Die Surface Displacements in Encapsulated IC Chip Packages Using X-Ray Diffraction Imaging Techniques. . https://doi.org/10.1109/ectc.2017.175
Direct, Independent Measurement Of Twist And Tilt Mosaic As A Function Of Thickness In Epitaxial Gan (2002)
Conference Proceeding
Lafford, T., Parbrook, P., & Tanner, B. (2002). Direct, Independent Measurement Of Twist And Tilt Mosaic As A Function Of Thickness In Epitaxial Gan. In A. Hoffmann, & A. Rizzi (Eds.),
Combined Room Temperature Photoluminescence And High Resolution X-ray Diffraction Mapping Of Semiconductor Wafers (1996)
Conference Proceeding
Cockerton, S., Cooke, M., Bowen, D., & Tanner, B. (1996). Combined Room Temperature Photoluminescence And High Resolution X-ray Diffraction Mapping Of Semiconductor Wafers. In S. Pang, O. Glembocki, F. Pollak, F. Celii, & C. SotomayorTorres (Eds.),
Grazing Incidence X-ray Reflectance Measurement Of Surface And Interface Roughness On The Sub-nanometre Scale (1994)
Conference Proceeding
Wormington, M., Sakurai, K., Bowen, D., & Tanner, B. (1994). Grazing Incidence X-ray Reflectance Measurement Of Surface And Interface Roughness On The Sub-nanometre Scale. In M. Sarikaya, H. Wickramasinghe, & M. Isaacson (Eds.), . https://doi.org/10.1557/proc-332-525
New Algorithms For Rapid Full-wafer Mapping By High-resolution Double Axis X-ray-diffraction (1994)
Conference Proceeding
Loxley, N., Cockerton, S., Cooke, L., Gray, T., Tanner, B., & Bowen, D. (1994). New Algorithms For Rapid Full-wafer Mapping By High-resolution Double Axis X-ray-diffraction. In O. Glembocki, S. Pang, F. Pollak, G. Crean, & G. Larrabee (Eds.),
A Grazing-incidence X-ray Reflectometer For Rapid Nondestructive Characterization Of Thin-films And Interfaces (1992)
Conference Proceeding
Loxley, N., Monteiro, A., Cooke, M., Bowen, D., & Tanner, B. (1992). A Grazing-incidence X-ray Reflectometer For Rapid Nondestructive Characterization Of Thin-films And Interfaces. In S. Pearton, D. Sadana, & J. Zavada (Eds.), . https://doi.org/10.1557/proc-240-219