Outputs (4)

Pore Wall Thinning of Mesoporous 4H-SiC by Sacrificial Oxidation (2018)
Journal Article
Rashid, M., Idris, M. I., Horrocks, B. R., Healy, N., Goss, J. P., & Horsfall, A. B. (2018). Pore Wall Thinning of Mesoporous 4H-SiC by Sacrificial Oxidation. Crystal Research and Technology, 53(9), Article 1800120. https://doi.org/10.1002/crat.201800120

Pore wall thinning of mesoporous 4H‐SiC by sacrificial oxidation is performed. The dimensions within the as‐etched porous SiC are reduced during dry oxidation at 1100 °C by consuming SiC and removing the grown SiO2 in the subsequent hydrofluoric acid... Read More about Pore Wall Thinning of Mesoporous 4H-SiC by Sacrificial Oxidation.

First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application (2018)
Journal Article
Weng, M., Idris, M., Wright, S., Clark, D., Young, R., McIntosh, J., …Horsfall, A. (2018). First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application. Materials Science Forum, 924, 854-857. https://doi.org/10.4028/www.scientific.net/msf.924.854

A high-temperature silicon carbide power module using CMOS gate drive technology and discrete power devices is presented. The power module was aged at 200V and 300 °C for 3,000 hours in a long-term reliability test. After the initial increase, the va... Read More about First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application.

Effect off Post Oxide Annealing on the electrical and Interface 4-H SiC/Al2O3 MOS Capacitors (2018)
Journal Article
Idris, M., Wright, N., & Horsfall, A. (2018). Effect off Post Oxide Annealing on the electrical and Interface 4-H SiC/Al2O3 MOS Capacitors. Materials Science Forum, 924, 486-489. https://doi.org/10.4028/www.scientific.net/msf.924.486

This paper reports on the effect of forming gas annealing on the C-V characteristics and stability of Al2O3/SiC MOS capacitors deposited by atomic layer deposition, (ALD). C-V and I-V measurements were performed to assess the quality of the Al2O3 lay... Read More about Effect off Post Oxide Annealing on the electrical and Interface 4-H SiC/Al2O3 MOS Capacitors.

Analysis of 3-Dimensional 4H-SiC MOS Capacitors Grown by Atomic Layer Deposition of Al2O3 (2018)
Journal Article
Idris, M., Wright, N., & Horsfall, A. (2018). Analysis of 3-Dimensional 4H-SiC MOS Capacitors Grown by Atomic Layer Deposition of Al2O3. Materials Science Forum, 924, 490-493. https://doi.org/10.4028/www.scientific.net/msf.924.490

3-Dimensional 4H-SiC metal-oxide-semiconductor capacitors have been fabricated to determine the effect of the sidewall on the characteristics of 3-Dimentional gate structures. Al2O3 deposited by Atomic Layer Deposition (ALD) was used as the gate diel... Read More about Analysis of 3-Dimensional 4H-SiC MOS Capacitors Grown by Atomic Layer Deposition of Al2O3.