First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application

Weng, M.H.; Idris, M.I.; Wright, S.; Clark, D.T.; Young, R.A.R.; McIntosh, J.R.; Gordon, D.L.; Horsfall, A.B.

Abstract

A high-temperature silicon carbide power module using CMOS gate drive technology and discrete power devices is presented. The power module was aged at 200V and 300 °C for 3,000 hours in a long-term reliability test. After the initial increase, the variation in the rise time of the module is 27% (49.63ns@1,000h compared to 63.1ns@3,000h), whilst the fall time increases by 54.3% (62.92ns@1,000h compared to 97.1ns@3,000h). The unique assembly enables the integrated circuits of CMOS logic with passive circuit elements capable of operation at temperatures of 300°C and beyond.

Citation

Weng, M., Idris, M., Wright, S., Clark, D., Young, R., McIntosh, J., Gordon, D., & Horsfall, A. (2018). First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application. Materials Science Forum, 924, 854-857. https://doi.org/10.4028/www.scientific.net/msf.924.854

• Journal Article Type: Article
• Acceptance Date: Nov 7, 2017
• Online Publication Date: Jun 5, 2018
• Publication Date: 2018-06
• Deposit Date: Oct 1, 2018
• Journal: Materials Science Forum
• Print ISSN: 0255-5476
• Electronic ISSN: 1662-9752
• Publisher: Trans Tech Publications
• Peer Reviewed: Peer Reviewed
• Volume: 924
• Pages: 854-857
• DOI: https://doi.org/10.4028/www.scientific.net/msf.924.854
• Public URL: https://durham-repository.worktribe.com/output/1313188