Pore Wall Thinning of Mesoporous 4H-SiC by Sacrificial Oxidation

Rashid, Marzaini; Idris, Muhammad Idzdihar; Horrocks, Benjamin Richard; Healy, Noel; Goss, Jonathan Paul; Horsfall, Alton Barrett

Abstract

Pore wall thinning of mesoporous 4H‐SiC by sacrificial oxidation is performed. The dimensions within the as‐etched porous SiC are reduced during dry oxidation at 1100 °C by consuming SiC and removing the grown SiO2 in the subsequent hydrofluoric acid (HF) dip step. The process reduces the average pore wall thickness from 27 nm to approximately 16 nm and reduces the thickness standard deviation from ±5 to ±1.4 nm for the investigated 9 h oxidation interval. The new pore wall thinning method will enable controlled nanoscale size reduction capability for mesoporous 4H‐SiC derived nanostructures.

Citation

Rashid, M., Idris, M. I., Horrocks, B. R., Healy, N., Goss, J. P., & Horsfall, A. B. (2018). Pore Wall Thinning of Mesoporous 4H-SiC by Sacrificial Oxidation. Crystal Research and Technology, 53(9), Article 1800120. https://doi.org/10.1002/crat.201800120

• Journal Article Type: Article
• Online Publication Date: Aug 21, 2018
• Publication Date: Sep 14, 2018
• Deposit Date: Oct 1, 2018
• Publicly Available Date: Aug 21, 2019
• Journal: Crystal Research and Technology
• Print ISSN: 0232-1300
• Electronic ISSN: 1521-4079
• Publisher: Wiley-VCH Verlag
• Peer Reviewed: Peer Reviewed
• Volume: 53
• Issue: 9
• Article Number: 1800120
• DOI: https://doi.org/10.1002/crat.201800120
• Public URL: https://durham-repository.worktribe.com/output/1313131