All Outputs (5)

Optical-properties and zeeman spectroscopy of Ti-doped GaP and GaAs (1988)
Journal Article
Payling, C., Halliday, D., Hayes, D., Saker, M., Skolnick, M., Ulrici, W., & Eaves, L. (1988). Optical-properties and zeeman spectroscopy of Ti-doped GaP and GaAs. Institute of physics conference series, 91, 125-128

Compensation ratios and electron mobility in high-purity n-InP: photoluminescence and far-infrared studies of a new theoretical relationship (1988)
Journal Article
Rikken, G., Wyder, P., Chamberlain, J., Grimes, R., & Halliday, D. (1988). Compensation ratios and electron mobility in high-purity n-InP: photoluminescence and far-infrared studies of a new theoretical relationship. Semiconductor Science and Technology, 3, 302-305

Optical And Electrical Studies Of Gap-ti (1988)
Journal Article
Ulrici, W., Friedland, K., Eaves, L., Halliday, D., & Payling, C. (1988). Optical And Electrical Studies Of Gap-ti. physica status solidi (b) – basic solid state physics, 150, 177-190

Investigations Of Recombination Mechanisms In The Pulsed Far Infra-red Photoresponse Of N-inp (1988)
Journal Article
Rikken, G., Wyder, P., Chamberlain, J., Halliday, D., & Grimes, R. (1988). Investigations Of Recombination Mechanisms In The Pulsed Far Infra-red Photoresponse Of N-inp. Solid-State Electronics, 31, 763-766. https://doi.org/10.1016/0038-1101%2888%2990384-x

Zeeman spectroscopy of the defect-induced bound-exciton lines in GaAs grown by molecular-beam epitaxy (1988)
Journal Article
Skolnick, M., Halliday, D., & Tu, C. (1988). Zeeman spectroscopy of the defect-induced bound-exciton lines in GaAs grown by molecular-beam epitaxy. Physical Review B (Condensed Matter), 38, 4165-4179. https://doi.org/10.1103/physrevb.38.4165