G.L.J.A. Rikken
Compensation ratios and electron mobility in high-purity n-InP: photoluminescence and far-infrared studies of a new theoretical relationship
Rikken, G.L.J.A.; Wyder, P.; Chamberlain, J.M.; Grimes, R.T.; Halliday, D.P.
Authors
P. Wyder
J.M. Chamberlain
R.T. Grimes
Professor Douglas Halliday d.p.halliday@durham.ac.uk
Professor
Citation
Rikken, G., Wyder, P., Chamberlain, J., Grimes, R., & Halliday, D. (1988). Compensation ratios and electron mobility in high-purity n-InP: photoluminescence and far-infrared studies of a new theoretical relationship. Semiconductor Science and Technology, 3, 302-305
| Journal Article Type | Article |
|---|---|
| Publication Date | 1988 |
| Journal | Semiconductor Science and Technology |
| Print ISSN | 0268-1242 |
| Electronic ISSN | 1361-6641 |
| Publisher | IOP Publishing |
| Volume | 3 |
| Pages | 302-305 |
| Public URL | https://durham-repository.worktribe.com/output/1592409 |
| Publisher URL | http://adsabs.harvard.edu/cgi-bin/nph-bib_query?bibcode=1988SeScT...3..302R&db_key=PHY |
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