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Zeeman spectroscopy of the defect-induced bound-exciton lines in GaAs grown by molecular-beam epitaxy

Skolnick, M.S.; Halliday, D.P.; Tu, C.W.

Authors

M.S. Skolnick

C.W. Tu



Citation

Skolnick, M., Halliday, D., & Tu, C. (1988). Zeeman spectroscopy of the defect-induced bound-exciton lines in GaAs grown by molecular-beam epitaxy. Physical Review B (Condensed Matter), 38, 4165-4179. https://doi.org/10.1103/physrevb.38.4165

Journal Article Type Article
Publication Date 1988
Journal Physical Review B
Print ISSN 0163-1829
Publisher American Physical Society
Volume 38
Pages 4165-4179
DOI https://doi.org/10.1103/physrevb.38.4165
Public URL https://durham-repository.worktribe.com/output/1622848
Publisher URL http://adsabs.harvard.edu/cgi-bin/nph-bib_query?bibcode=1988PhRvB..38.4165S&db_key=PHY