Quantitative Imaging of the Stress/Strain Fields and Generation of Macroscopic Cracks from Indents in Silicon
(2017)
Journal Article
Tanner, B., Allen, D., Wittge, J., Danilewsky, A., Garagorri, J., Gorostegui-Colinas, E., …McNally, P. (2017). Quantitative Imaging of the Stress/Strain Fields and Generation of Macroscopic Cracks from Indents in Silicon. Crystals, 7(11), Article 347. https://doi.org/10.3390/cryst7110347
The crack geometry and associated strain field around Berkovich and Vickers indents on silicon have been studied by X-ray diffraction imaging and micro-Raman spectroscopy scanning. The techniques are complementary; the Raman data come from within a f... Read More about Quantitative Imaging of the Stress/Strain Fields and Generation of Macroscopic Cracks from Indents in Silicon.