Joshua N. Arthur
Effect of Gate Conductance on Hygroscopic Insulator Organic Field-Effect Transistors
Arthur, Joshua N.; Chaudhry, Mujeeb Ullah; Woodruff, Maria A.; Pandey, Ajay K.; Yambem, Soniya D.
Dr Mujeeb Chaudhry email@example.com
Maria A. Woodruff
Ajay K. Pandey
Soniya D. Yambem
Hygroscopic insulator field‐effect transistors (HIFETs) are a class of low‐voltage‐operation organic transistors that have been successfully demonstrated for biosensing applications through modification of the gate electrode. However, modification of the gate electrode often leads to nonideal transistor characteristics due to changes in its intrinsic electrical properties. This work investigates the effect of gate conductance in HIFETs using poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) as a model gate electrode. It is revealed that a reduction in gate conductance results in a reduction in the effective gate voltage and plays an important role in defining HIFET characteristics. Key figures of merit, including ON/OFF ratio, threshold voltage, transconductance, and saturation mobility increase with increasing gate conductance and reach a plateau once sufficient gate conductance is attained. This effect is attributed to a decrease in the effective gate voltage along the gate electrode arising from its resistivity when a gate leakage current is present. These results are widely applicable and serve as design rules for HIFET device optimization.
Arthur, J. N., Chaudhry, M. U., Woodruff, M. A., Pandey, A. K., & Yambem, S. D. (2020). Effect of Gate Conductance on Hygroscopic Insulator Organic Field-Effect Transistors. Advanced Electronic Materials, 6(5), Article 1901079. https://doi.org/10.1002/aelm.201901079
|Journal Article Type||Article|
|Acceptance Date||Mar 9, 2020|
|Online Publication Date||Mar 26, 2020|
|Publication Date||May 31, 2020|
|Deposit Date||Apr 10, 2020|
|Publicly Available Date||Mar 26, 2021|
|Journal||Advanced Electronic Materials|
|Peer Reviewed||Peer Reviewed|
Accepted Journal Article
This is the peer reviewed version of the following article: Arthur, Joshua N., Chaudhry, Mujeeb Ullah, Woodruff, Maria A., Pandey, Ajay K. & Yambem, Soniya D. (2020). Effect of Gate Conductance on Hygroscopic Insulator Organic Field-Effect Transistors. Advanced Electronic Materials 6(5): 1901079 which has been published in final form at https://doi.org/10.1002/aelm.201901079. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.
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