Outputs (8)

TiO 2 ‐Based Schottky Diodes as Bidirectional Switches for Bipolar Resistive Memories (2024)
Journal Article
Zhang, X., Jin, J., Kim, J., Balocco, C., Zhang, J., & Song, A. (2024). TiO 2 ‐Based Schottky Diodes as Bidirectional Switches for Bipolar Resistive Memories. physica status solidi (RRL) - Rapid Research Letters, 18(12), Article 2400156. https://doi.org/10.1002/pssr.202400156

This study presents TiO2‐based Schottky diodes designed as bidirectional switches for bipolar resistive memories. The TiO2 films in these Schottky diodes are prepared through an anodization process. The reverse current of these diodes exhibits an exp... Read More about TiO 2 ‐Based Schottky Diodes as Bidirectional Switches for Bipolar Resistive Memories.

Metal-insulator-metal diodes based on alkyltrichlorosilane self-assembled monolayers (2019)
Journal Article
Jin, J., Wang, L., Zheng, Z., Zhang, J., Hu, X., Lu, J. R., Etor, D., Pearson, C., Song, A., Wood, D., Gallant, A. J., & Balocco, C. (2019). Metal-insulator-metal diodes based on alkyltrichlorosilane self-assembled monolayers. AIP Advances, 9(6), https://doi.org/10.1063/1.5100252

This paper reports on the experimental investigation of metal-insulator-metal (MIM) diodes based on alkyltrichlorosilane self-assembled monolayers (SAMs) with different alkyl chain lengths. The insulating SAM is sandwiched between two metal contacts,... Read More about Metal-insulator-metal diodes based on alkyltrichlorosilane self-assembled monolayers.

A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density (2018)
Journal Article
Jin, J., Zhang, J., Shaw, A., Kudina, V. N., Mitrovic, I. Z., Wrench, J. S., …Hall, S. (2018). A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density. Journal of Physics D: Applied Physics, 51(6), Article 065102. https://doi.org/10.1088/1361-6463/aaa4a2

Zinc oxide (ZnO) has recently attracted attention for its potential application to high speed electronics. In this work, a high speed Schottky diode rectifier was fabricated based on a ZnO thin film deposited by plasma-enhanced atomic layer depositio... Read More about A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density.

Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements (2017)
Journal Article
Shaw, A., Jin, J., Mitrovic, I., Hall, S., Wrench, J., & Chalker, P. (2017). Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements. Microelectronic Engineering, 178, 213-216. https://doi.org/10.1016/j.mee.2017.05.043

The sub-band gap density of states (DOS) of Nb doped ZnO thin film transistors were extracted using a multi-frequency capacitance-voltage (C-V) method. The results can be represented by a two-term exponential DOS, representing the tail and deep state... Read More about Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements.

Atomic layer deposition of Nb-doped ZnO for thin film transistors (2016)
Journal Article
Shaw, A., Wrench, J., Jin, J., Whittles, T., Mitrovic, I., Raja, M., …Hall, S. (2016). Atomic layer deposition of Nb-doped ZnO for thin film transistors. Applied Physics Letters, 109(22), Article 222103. https://doi.org/10.1063/1.4968194

We present physical and electrical characterization of niobium-doped zinc oxide (NbZnO) for thin film transistor (TFT) applications. The NbZnO films were deposited using atomic layer deposition. X-ray diffraction measurements indicate that the crysta... Read More about Atomic layer deposition of Nb-doped ZnO for thin film transistors.

Highly Stable and Conductive Microcapsules for Enhancement of Joule Heating Performance (2016)
Journal Article
Zheng, Z., Jin, J., Xu, G., Zou, J., Wais, U., Beckett, A., …Shchukin, D. (2016). Highly Stable and Conductive Microcapsules for Enhancement of Joule Heating Performance. ACS Nano, 10(4), 4695-4703. https://doi.org/10.1021/acsnano.6b01104

Nanocarbons show great promise for establishing the next generation of Joule heating systems, but suffer from the limited maximum temperature due to precociously convective heat dissipation from electrothermal system to surrounding environment. Here... Read More about Highly Stable and Conductive Microcapsules for Enhancement of Joule Heating Performance.

Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes (2015)
Journal Article
Zhang, J., Zhang, L., Ma, X., Wilson, J., Jin, J., Du, L., …Song, A. (2015). Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes. Applied Physics Letters, 107(9), Article 093505. https://doi.org/10.1063/1.4930019

The low-frequency noise properties of Pt-indium gallium zinc oxide (IGZO) Schottky diodes at different forward biases are investigated. The IGZO layer and Pt contact were deposited by RF sputtering at room temperature. The diode showed an ideality fa... Read More about Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes.

Compositional tuning of atomic layer deposited MgZnO for thin film transistors (2014)
Journal Article
Wrench, J., Brunell, I., Chalker, P., Jin, J., Shaw, A., Mitrovic, I., & Hall, S. (2014). Compositional tuning of atomic layer deposited MgZnO for thin film transistors. Applied Physics Letters, 105(20), Article 202109. https://doi.org/10.1063/1.4902389

Thin film transistors (TFTs) have been fabricated using magnesium zinc oxide (MgZnO) layers deposited by atomic layer deposition at 200 °C. The composition of the MgZnO is systematically modified by varying the ratio of MgO and ZnO deposition cycles.... Read More about Compositional tuning of atomic layer deposited MgZnO for thin film transistors.