Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements

Shaw, A.; Jin, J.D.; Mitrovic, I.Z.; Hall, S.; Wrench, J.S.; Chalker, P.R.

Abstract

The sub-band gap density of states (DOS) of Nb doped ZnO thin film transistors were extracted using a multi-frequency capacitance-voltage (C-V) method. The results can be represented by a two-term exponential DOS, representing the tail and deep states. The parameters for the tail and deep states are Ntail = 1.6 × 1019 cm− 3, Ttail = 540 K, Ndeep = 6.5 × 1016 cm− 3 and Tdeep = 4058 K respectively. Furthermore, the DOS from C-V provides a good fit with current-voltage characteristics, using the multiple trap and release model.

Citation

Shaw, A., Jin, J., Mitrovic, I., Hall, S., Wrench, J., & Chalker, P. (2017). Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements. Microelectronic Engineering, 178, 213-216. https://doi.org/10.1016/j.mee.2017.05.043

• Journal Article Type: Article
• Acceptance Date: May 15, 2017
• Online Publication Date: May 16, 2017
• Publication Date: Jun 25, 2017
• Deposit Date: Jun 1, 2017
• Publicly Available Date: Jun 2, 2017
• Journal: Microelectronic Engineering
• Print ISSN: 0167-9317
• Publisher: Elsevier
• Peer Reviewed: Peer Reviewed
• Volume: 178
• Pages: 213-216
• DOI: https://doi.org/10.1016/j.mee.2017.05.043