Compositional tuning of atomic layer deposited MgZnO for thin film transistors

Wrench, J.S.; Brunell, I.F.; Chalker, P.R.; Jin, J.D.; Shaw, A.; Mitrovic, I.Z.; Hall, S.

Abstract

Thin film transistors (TFTs) have been fabricated using magnesium zinc oxide (MgZnO) layers deposited by atomic layer deposition at 200 °C. The composition of the MgZnO is systematically modified by varying the ratio of MgO and ZnO deposition cycles. A blue-shift of the near band-edge photoluminescence after post-deposition annealing at 300 °C indicates significant activation of the Mg dopant. A 7:1 ratio of ZnO:MgO deposition cycles was used to fabricate a device with a TFT channel width of 2000 μm and a channel length of 60 μm. This transistor yielded an effective saturation mobility of 4 cm2/V s and a threshold voltage of 7.1 V, respectively. The on/off ratio was 1.6×106 and the maximum interface state density at the ZnO/SiO2 interface is ∼6.5×1012 cm−2.

Citation

Wrench, J., Brunell, I., Chalker, P., Jin, J., Shaw, A., Mitrovic, I., & Hall, S. (2014). Compositional tuning of atomic layer deposited MgZnO for thin film transistors. Applied Physics Letters, 105(20), Article 202109. https://doi.org/10.1063/1.4902389

• Journal Article Type: Article
• Acceptance Date: Nov 11, 2014
• Online Publication Date: Nov 20, 2014
• Publication Date: Nov 20, 2014
• Deposit Date: May 31, 2017
• Publicly Available Date: Jun 26, 2018
• Journal: Applied Physics Letters
• Print ISSN: 0003-6951
• Electronic ISSN: 1077-3118
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 105
• Issue: 20
• Article Number: 202109
• DOI: https://doi.org/10.1063/1.4902389
• Public URL: https://durham-repository.worktribe.com/output/1385827