Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes

Zhang, Jiawei; Zhang, Linqing; Ma, Xiaochen; Wilson, Joshua; Jin, Jidong; Du, Lulu; Xin, Qian; Song, Aimin

Abstract

The low-frequency noise properties of Pt-indium gallium zinc oxide (IGZO) Schottky diodes at different forward biases are investigated. The IGZO layer and Pt contact were deposited by RF sputtering at room temperature. The diode showed an ideality factor of 1.2 and a barrier height of 0.94 eV. The current noise spectral density exhibited 1/f behavior at low frequencies. The analysis of the current dependency of the noise spectral density revealed that for the as-deposited diode, the noise followed Luo's mobility and diffusivity fluctuation model in the thermionic-emission-limited region and Hooge's empirical theory in the series-resistance-limited region. A low Hooge's constant of 1.4 × 10−9 was found in the space-charge region. In the series-resistance-limited region, the Hooge's constant was 2.2 × 10−5. After annealing, the diode showed degradation in the electrical performance. The interface-trap-induced noise dominated the noise spectrum. By using the random walk model, the interface-trap density was obtained to be 3.6 × 1015 eV−1 cm−2. This work provides a quantitative approach to analyze the properties of Pt-IGZO interfacial layers. These low noise properties are a prerequisite to the use of IGZO Schottky diodes in switch elements in memory devices, photosensors, and mixer diodes.

Citation

Zhang, J., Zhang, L., Ma, X., Wilson, J., Jin, J., Du, L., …Song, A. (2015). Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes. Applied Physics Letters, 107(9), Article 093505. https://doi.org/10.1063/1.4930019

• Journal Article Type: Article
• Acceptance Date: Aug 19, 2015
• Online Publication Date: Sep 2, 2015
• Publication Date: Sep 2, 2015
• Deposit Date: May 31, 2017
• Publicly Available Date: Jun 26, 2018
• Journal: Applied Physics Letters
• Print ISSN: 0003-6951
• Electronic ISSN: 1077-3118
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 107
• Issue: 9
• Article Number: 093505
• DOI: https://doi.org/10.1063/1.4930019