A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density

Jin, Jidong; Zhang, Jiawei; Shaw, Andrew; Kudina, Valeriya N.; Mitrovic, Ivona Z.; Wrench, Jacqueline S.; Chalker, Paul R.; Balocco, Claudio; Song, Aimin; Hall, Steve

Abstract

Zinc oxide (ZnO) has recently attracted attention for its potential application to high speed electronics. In this work, a high speed Schottky diode rectifier was fabricated based on a ZnO thin film deposited by plasma-enhanced atomic layer deposition and a PtOx Schottky contact deposited by reactive radio-frequency sputtering. The rectifier shows an ideality factor of 1.31, an effective barrier height of 0.79 eV, a rectification ratio of 1.17  ×  107, and cut-off frequency as high as 550 MHz. Low frequency noise measurements reveal that the rectifier has a low interface-state density of 5.13  ×  1012 cm−2 eV−1, and the noise is dominated by the mechanism of a random walk of electrons at the PtO x /ZnO interface. The work shows that the rectifier can be used for both noise sensitive and high frequency electronics applications.

Citation

Jin, J., Zhang, J., Shaw, A., Kudina, V. N., Mitrovic, I. Z., Wrench, J. S., …Hall, S. (2018). A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density. Journal of Physics D: Applied Physics, 51(6), Article 065102. https://doi.org/10.1088/1361-6463/aaa4a2

• Journal Article Type: Article
• Acceptance Date: Jan 2, 2018
• Online Publication Date: Jan 19, 2018
• Publication Date: Feb 14, 2018
• Deposit Date: Jan 4, 2018
• Publicly Available Date: Jan 19, 2019
• Journal: Journal of Physics D: Applied Physics
• Print ISSN: 0022-3727
• Electronic ISSN: 1361-6463
• Publisher: IOP Publishing
• Peer Reviewed: Peer Reviewed
• Volume: 51
• Issue: 6
• Article Number: 065102
• DOI: https://doi.org/10.1088/1361-6463/aaa4a2