Optical-properties Of Ultrathin 50nm Gaas Membranes (1995)
Journal Article
Halliday, D., Eggleston, J., Lee, K., Frost, J., & Beaumont, S. (1995). Optical-properties Of Ultrathin 50nm Gaas Membranes. Solid State Communications, 96, 359-365. https://doi.org/10.1016/0038-1098%2895%2900479-3

High-speed Photodetection In A Reverse Biased Gaas/algaas Grinsch Sqw Laser Structure (1992)
Journal Article
Moss, D., Landheer, D., Conn, D., Halliday, D., Charbonneau, S., Aers, G., …Chatenoud, F. (1992). High-speed Photodetection In A Reverse Biased Gaas/algaas Grinsch Sqw Laser Structure. IEEE Photonics Technology Letters, 4, 609-611. https://doi.org/10.1109/68.141984

Time resolved photoluminescence studies in a reverse biased quantum well laser structure (1992)
Journal Article
Halliday, D., Moss, D., Charbonneau, S., Aers, G., Chatenoud, F., & Landheer, D. (1992). Time resolved photoluminescence studies in a reverse biased quantum well laser structure. Applied Physics Letters, 61, 2497-2499

Ultrafast electron tunnelling times in reverse biased quantum well laser structures (1992)
Journal Article
Moss, D., Halliday, D., Charbonneau, S., Aers, G., Landheer, D., Barber, R., & Chatenoud, F. (1992). Ultrafast electron tunnelling times in reverse biased quantum well laser structures

Ultrafast Electron-tunneling In A Reverse-biased, High-efficiency Quantum-well Laser Structure (1992)
Journal Article
Halliday, D., Moss, D., Charbonneau, S., Aers, G., Landheer, D., Chatenoud, F., & Conn, D. (1992). Ultrafast Electron-tunneling In A Reverse-biased, High-efficiency Quantum-well Laser Structure. Canadian Journal of Physics, 70, 985-992

Optical Investigation Of Charge Accumulation And Bistability In An Asymmetric Double Barrier Resonant Tunneling Heterostructure (1990)
Journal Article
Hayes, D., Skolnick, M., Simmonds, P., Eaves, L., Halliday, D., Leadbeater, M., …Pate, M. (1990). Optical Investigation Of Charge Accumulation And Bistability In An Asymmetric Double Barrier Resonant Tunneling Heterostructure. Surface Science, 228, 373-377. https://doi.org/10.1016/0039-6028%2890%2990331-2

Electronic processes in double-barrier resonant-tunneling structures studied by photoluminescence spectroscopy in zero and finite magnetic fields (1990)
Journal Article
Skolnick, M., Hayes, D., Simmonds, P., Higgs, A., Smith, G., Hutchinson, H., …Halliday, D. (1990). Electronic processes in double-barrier resonant-tunneling structures studied by photoluminescence spectroscopy in zero and finite magnetic fields. Physical Review B (Condensed Matter), 41, 10754-10766. https://doi.org/10.1103/physrevb.41.10754

Erratum: Electronic processes in double-barrier resonant-tunneling structures studied by photoluminescence spectroscopy in zero and finite magnetic fields [Phys. Rev. B 41, 10754 (1990)] (1990)
Journal Article
Skolnick, M., Hayes, D., Simmonds, P., Higgs, A., Smith, G., Hutchinson, H., …Halliday, D. (1990). Erratum: Electronic processes in double-barrier resonant-tunneling structures studied by photoluminescence spectroscopy in zero and finite magnetic fields [Phys. Rev. B 41, 10754 (1990)]. Physical Review B (Condensed Matter), 42, 5364-. https://doi.org/10.1103/physrevb.42.5364

Residual Impurities In Autodoped Normal-gaas Grown By Mbe (1989)
Journal Article
Stanaway, M., Grimes, R., Halliday, D., Chamberlain, J., Henini, M., Hughes, O., …Hill, G. (1989). Residual Impurities In Autodoped Normal-gaas Grown By Mbe. Institute of physics conference series, 295-300

Zeeman spectroscopy of the defect-induced bound-exciton lines in GaAs grown by molecular-beam epitaxy (1988)
Journal Article
Skolnick, M., Halliday, D., & Tu, C. (1988). Zeeman spectroscopy of the defect-induced bound-exciton lines in GaAs grown by molecular-beam epitaxy. Physical Review B (Condensed Matter), 38, 4165-4179. https://doi.org/10.1103/physrevb.38.4165

Investigations Of Recombination Mechanisms In The Pulsed Far Infra-red Photoresponse Of N-inp (1988)
Journal Article
Rikken, G., Wyder, P., Chamberlain, J., Halliday, D., & Grimes, R. (1988). Investigations Of Recombination Mechanisms In The Pulsed Far Infra-red Photoresponse Of N-inp. Solid-State Electronics, 31, 763-766. https://doi.org/10.1016/0038-1101%2888%2990384-x

Optical And Electrical Studies Of Gap-ti (1988)
Journal Article
Ulrici, W., Friedland, K., Eaves, L., Halliday, D., & Payling, C. (1988). Optical And Electrical Studies Of Gap-ti. physica status solidi (b) – basic solid state physics, 150, 177-190

Compensation ratios and electron mobility in high-purity n-InP: photoluminescence and far-infrared studies of a new theoretical relationship (1988)
Journal Article
Rikken, G., Wyder, P., Chamberlain, J., Grimes, R., & Halliday, D. (1988). Compensation ratios and electron mobility in high-purity n-InP: photoluminescence and far-infrared studies of a new theoretical relationship. Semiconductor Science and Technology, 3, 302-305

Optical-properties and zeeman spectroscopy of Ti-doped GaP and GaAs (1988)
Journal Article
Payling, C., Halliday, D., Hayes, D., Saker, M., Skolnick, M., Ulrici, W., & Eaves, L. (1988). Optical-properties and zeeman spectroscopy of Ti-doped GaP and GaAs. Institute of physics conference series, 91, 125-128

Optical Studies Of Vanadium In Gallium-phosphide (1987)
Journal Article
Ulrici, W., Eaves, L., Friedland, K., & Halliday, D. (1987). Optical Studies Of Vanadium In Gallium-phosphide. physica status solidi (b) – basic solid state physics, 141, 191-202. https://doi.org/10.1002/pssb.2221410118

LETTER TO THE EDITOR: Zeeman spectroscopy on Ti-doped GaAs and GaP (1987)
Journal Article
Halliday, D., Payling, C., Saker, M., Skolnick, M., Ulrici, W., & Eaves, L. (1987). LETTER TO THE EDITOR: Zeeman spectroscopy on Ti-doped GaAs and GaP. Semiconductor Science and Technology, 2, 679-682

Vanadium in GaAs and GaP (1986)
Journal Article
Ulrici, W., Eaves, L., Friedland, K., Halliday, D., & Kreissl, J. (1986). Vanadium in GaAs and GaP. Materials Science Forum, 10-12, 639-644

Comment on the time-resolved photoluminescence study of MBE-growth-induced defect lines (1986)
Journal Article
Eaves, L., Skolnick, M., & Halliday, D. (1986). Comment on the time-resolved photoluminescence study of MBE-growth-induced defect lines. Journal of physics. C. Solid state physics, 19, L445-L446. https://doi.org/10.1088/0022-3719/19/20/005

Optically induced changes of the Cr-related absorption lines in GaP:Cr-evidence for internal transitions of Crt<SUB>Ga</SUB>³⁺ (1986)
Journal Article
Halliday, D., Ulrici, W., & Eaves, L. (1986). Optically induced changes of the Cr-related absorption lines in GaP:Cr-evidence for internal transitions of CrtGa³⁺. Journal of physics. C. Solid state physics, 19, L683-L687. https://doi.org/10.1088/0022-3719/19/29/003

Optical studies of GaAs:Ti (1986)
Journal Article
Ulrici, W., Eaves, L., Friedland, K., Halliday, D., Nash, K., & Skolnick, M. (1986). Optical studies of GaAs:Ti. Journal of physics. C. Solid state physics, 19, L525-L529. https://doi.org/10.1088/0022-3719/19/23/004