Negative refracting materials at THz frequencies. (2008)
Conference Proceeding
Swift, G. P., Gallant, A. J., Dai, D., Kaliteevski, M. A., Brand, S., Zeze, D. A., …Chamberlain, J. M. (2008). Negative refracting materials at THz frequencies. In Proceedings of the 33rd International Conference on Infrared, Millimeter, and Terahertz Waves: 15-19 September 2008, Pasadena, California (496-497). https://doi.org/10.1109/icimw.2008.4665668

We demonstrate here, for the first time, the construction of artificial materials, which theoretically possess two separate pass-bands utilizing the difference between positive and negative refraction in the terahertz frequency regime. Experimental t... Read More about Negative refracting materials at THz frequencies..

Poole-Frenkel conduction in single wall carbon nanotube composite films built up by electrostatic layer-by-layer deposition (2008)
Journal Article
Jombert, A., Coleman, K., Wood, D., Petty, M., & Zeze, D. (2008). Poole-Frenkel conduction in single wall carbon nanotube composite films built up by electrostatic layer-by-layer deposition. Journal of Applied Physics, 104(9), Article 094503. https://doi.org/10.1063/1.3006015

The fabrication of large area thin films of single wall carbon nanotubes (SWCNTs) using electrostatic layer-by-layer deposition is reported. The in-plane current versus voltage (I-V) characteristics were dependent on the concentration of SWCNTs trans... Read More about Poole-Frenkel conduction in single wall carbon nanotube composite films built up by electrostatic layer-by-layer deposition.

Memory effects in hybrid silicon-metallic nanoparticle-organic thin film structures (2008)
Journal Article
Mabrook, M., Pearson, C., Kolb, D., Zeze, D., & Petty, M. (2008). Memory effects in hybrid silicon-metallic nanoparticle-organic thin film structures. Organic Electronics, 9(5), 816-820

We report on the electrical behaviour of metal-insulator-semiconductor (MIS) structures fabricated on silicon substrates and using organic thin films as the dielectric layers. These insulating thin films were produced by different methods, including... Read More about Memory effects in hybrid silicon-metallic nanoparticle-organic thin film structures.

Memory effects in MIS structures based on silicon and polymethylmethacrylate with nanoparticle charge-storage elements. (2008)
Journal Article
Mabrook, M., Jombert, A., Machin, S., Pearson, C., Kolb, D., Coleman, K., …Petty, M. (2009). Memory effects in MIS structures based on silicon and polymethylmethacrylate with nanoparticle charge-storage elements. Materials Science and Engineering: B, 159-160, 14-17. https://doi.org/10.1016/j.mseb.2008.09.003

We report on the electrical behaviour of metal–insulator–semiconductor (MIS) structures fabricated on p-type silicon substrates and using polymethylmethacrylate (PMMA) as the dielectric. Gold nanoparticles, single-wall carbon nanotubes and C60, depos... Read More about Memory effects in MIS structures based on silicon and polymethylmethacrylate with nanoparticle charge-storage elements..

Electrical behavior of memory devices based on fluorene-containing organic thin films (2008)
Journal Article
Dimitrakis, P., Normand, P., Tsoukalas, D., Pearson, C., Ahn, J., Mabrook, M., …Green, M. (2008). Electrical behavior of memory devices based on fluorene-containing organic thin films. Journal of Applied Physics, 104(4), Article 044510. https://doi.org/10.1063/1.2968551

We report on switching and negative differential resistance (NDR) behaviors of crossed bar electrode structures based on Al/organic layer/Al devices in which the organic layer was a spin-coated layer of 7-{4-[5-(4-tert-butylphenyl)-1,3,4-oxadiazol-2-... Read More about Electrical behavior of memory devices based on fluorene-containing organic thin films.