Memory effects in MIS structures based on silicon and polymethylmethacrylate with nanoparticle charge-storage elements.

Mabrook, M.F.; Jombert, A.S.; Machin, S.E.; Pearson, C.; Kolb, D.; Coleman, K.S.; Zeze, D.A.; Petty, M.C.

Abstract

We report on the electrical behaviour of metal–insulator–semiconductor (MIS) structures fabricated on p-type silicon substrates and using polymethylmethacrylate (PMMA) as the dielectric. Gold nanoparticles, single-wall carbon nanotubes and C60, deposited at room temperature, were used as charge-storage elements. In all cases, the MIS devices containing the nanoparticles exhibited hysteresis in their capacitance versus voltage characteristics, with a memory window depending on the range of the voltage sweep. This hysteresis was attributed to the charging and discharging of the nanoparticles from the gate electrode. A relatively large memory window of about 2.2 V was achieved by scanning the applied voltage of an Al/PMMA/C60/SiO2/Si structure between 4 and −4 V. Gold nanoparticle-based memory devices produced the best charge retention behaviour compared to the other MIS structures investigated.

Citation

Mabrook, M., Jombert, A., Machin, S., Pearson, C., Kolb, D., Coleman, K., …Petty, M. (2009). Memory effects in MIS structures based on silicon and polymethylmethacrylate with nanoparticle charge-storage elements. Materials Science and Engineering: B, 159-160, 14-17. https://doi.org/10.1016/j.mseb.2008.09.003

• Journal Article Type: Article
• Acceptance Date: Sep 1, 2008
• Online Publication Date: Sep 26, 2008
• Publication Date: 2009-03
• Journal: Materials Science and Engineering: B
• Print ISSN: 0921-5107
• Publisher: Elsevier
• Peer Reviewed: Peer Reviewed
• Volume: 159-160
• Pages: 14-17
• DOI: https://doi.org/10.1016/j.mseb.2008.09.003
• Keywords: Cold nanoparticles; C-60; Carbon nanotubes; PMMA; Memory devicesMETALLIC NANOPARTICLES; CARBON NANOTUBE; THIN-FILMS; FABRICATION; DEVICE; LAYERS; OXIDE
• Public URL: https://durham-repository.worktribe.com/output/1546350