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Professor Douglas Halliday's Outputs (96)

The effect of the wall contact and post-growth cool-down on defects in CdTe crystals grown by 'contactless' physical vapour transport (2003)
Journal Article
Palosz, W., Grasza, K., Durose, K., Halliday, D., Boyall, N., Dudley, M., …Cai, L. (2003). The effect of the wall contact and post-growth cool-down on defects in CdTe crystals grown by 'contactless' physical vapour transport. Journal of Crystal Growth, 254(3-4), 316-328. https://doi.org/10.1016/s0022-0248%2803%2901183-7

A series of cadmium telluride crystals grown by physical vapour transport without contact with the ampoule walls and cooled at different rates were characterized using synchrotron X-ray topography, photoluminescence, and chemical etching. Strain from... Read More about The effect of the wall contact and post-growth cool-down on defects in CdTe crystals grown by 'contactless' physical vapour transport.

Photoluminescence studies of CdS/CdTe solar cells treated with oxygen (2003)
Journal Article
Hernandez-Fenollosa, M., Halliday, D., Durose, K., Campo, M., & Beier, J. (2003). Photoluminescence studies of CdS/CdTe solar cells treated with oxygen. Thin Solid Films, 431, 176-180. https://doi.org/10.1016/s0040-6090%2803%2900238-4

In this work we have used low temperature photoluminescence (PL) to study a set of CdS/CdTe solar cells grown by close space sublimation. The samples were given a post-growth treatment at 390 °C with HCl in a varying partial pressure of oxygen of up... Read More about Photoluminescence studies of CdS/CdTe solar cells treated with oxygen.

Photoluminescence characrerisation of ion implanted CdTe (2002)
Book Chapter
Halliday, D., Potter, M., Boyle, D., & Durose, K. (2002). Photoluminescence characrerisation of ion implanted CdTe. In R. Birkmire, R. Noufi, D. Lincot, & H. Schock (Eds.), Compound Semiconductor Photovoltaic Materials: 2001 MRS Spring Meeting - Symposium H – II-IV (H1.8.1 - H1.8.6). Cambridge University Press. https://doi.org/10.1557/proc-668-h1.8

We have ion implanted a series of dopants into single crystal CdTe. The influence of the impurities on the CdTe has been studied by low temperature photoluminescence spectroscopy. The impurities studied are: O, Cl, Cu, S, Na and Sb, and were selected... Read More about Photoluminescence characrerisation of ion implanted CdTe.

Steady State Photoconductivity In Conjugated Polymers (2002)
Book Chapter
Sitch, C., Halliday, D., & Monkman, A. (2002). Steady State Photoconductivity In Conjugated Polymers. In G. E. Jabbour, & N. S. Sariciftci (Eds.), Electronic, Optical and Optoelectronic Polymers and Oligomers (327-331). Materials Research Society

The influence of CdTe growth ambient on MOCVD grown CdS/CdTe photovoltaic cells. (2001)
Journal Article
Hartley, A., Irvine, S., Halliday, D., & Potter, M. (2001). The influence of CdTe growth ambient on MOCVD grown CdS/CdTe photovoltaic cells. Thin Solid Films, 387(1-2), 89-91. https://doi.org/10.1016/s0040-6090%2800%2901722-3

CdS/CdTe photovoltaic cells have been grown by MOCVD (metal–organic chemical vapour deposition) with a range of VI/II ratios in the CdTe reactant mixture. All CdTe layers were highly doped with As (approx. 2×1018 atoms/cm3) to ensure p-type conductiv... Read More about The influence of CdTe growth ambient on MOCVD grown CdS/CdTe photovoltaic cells..

Analysis of CdCl2 annealing process in CdTe/CdS solar cells (2000)
Presentation / Conference Contribution
Potter, M., Halliday, D., Cousins, M., Scheer, H., McNelis, B., Palz, W., Ossenbrink, H., & Helm, P. (2000, December). Analysis of CdCl2 annealing process in CdTe/CdS solar cells. Presented at 16th European Photovoltaic Solar Energy, Glasgow, Scotland

A series of CdTe/CdS solar cells are subjected to CdCl2 anneals of varying lengths and then chemically bevelled and analysed by photoluminescence (PL) spectroscopy. Half of the samples were subjected to a physical polishing using 0.25 m diamond paste... Read More about Analysis of CdCl2 annealing process in CdTe/CdS solar cells.

Effect of interdiffusion and impurities on thin film CdTe/CdS photovoltaic junctions (2000)
Journal Article
Potter, M., Cousins, M., Durose, K., & Halliday, D. (2000). Effect of interdiffusion and impurities on thin film CdTe/CdS photovoltaic junctions. Journal of Materials Science: Materials in Electronics, 11(7), 525-530. https://doi.org/10.1023/a%3A1026565632569

We have used low temperature photoluminescence (PL) to study thin film CdTe/CdS solar cell structures. The devices were produced by close space sublimation (CSS) and have undergone a post-growth treatment, a vital step in increasing device efficiency... Read More about Effect of interdiffusion and impurities on thin film CdTe/CdS photovoltaic junctions.

Electrical and optical properties of a polymer semiconductor interface (1999)
Journal Article
Halliday, D., Gray, J., Adams, P., & Monkman, A. (1999). Electrical and optical properties of a polymer semiconductor interface. Synthetic Metals, 102(1-3), 877-878

We have fabricated a stable electrical interface between a range of n-type, p-type and undoped GaAs epitaxial layers and a film of conductive p-type polyaniline. The IV characteristics of this device show rectifying behaviour consistent with a potent... Read More about Electrical and optical properties of a polymer semiconductor interface.

Visible electroluminescence from a polyaniline-porous silicon junction (1997)
Journal Article
Halliday, D., Eggleston, J., Adams, P., Pentland, I., & Monkman, A. (1997). Visible electroluminescence from a polyaniline-porous silicon junction. Synthetic Metals, 85(1-3), 1245-1246

We have studied the interface formed between a p-type conducting polyaniline layer and an n-type porous silicon wafer, The contact has rectifying behaviour demonstrated clearly by the IV curves, We can fit our data to a simple Schottky barrier model.... Read More about Visible electroluminescence from a polyaniline-porous silicon junction.