The influence of CdTe growth ambient on MOCVD grown CdS/CdTe photovoltaic cells.

Hartley, A.; Irvine, S.J.C.; Halliday, D.P.; Potter, M.D.G.

Abstract

CdS/CdTe photovoltaic cells have been grown by MOCVD (metal–organic chemical vapour deposition) with a range of VI/II ratios in the CdTe reactant mixture. All CdTe layers were highly doped with As (approx. 2×1018 atoms/cm3) to ensure p-type conductivity. Cell characteristics were measured in the as-grown state, without ex-situ CdCl2 or annealing treatments. The VI/II ratio, determined by the ratio of the organometallic concentrations, strongly affects cell performance, with a peak in photocurrent occurring at Te/Cd at approximately 0.6. An increase in growth temperature from 320 to 350°C more than doubles the efficiency at this VI/II ratio. An exponential-type relationship between the photocurrent and series resistance is apparent at each growth temperature.

Citation

Hartley, A., Irvine, S., Halliday, D., & Potter, M. (2001). The influence of CdTe growth ambient on MOCVD grown CdS/CdTe photovoltaic cells. Thin Solid Films, 387(1-2), 89-91. https://doi.org/10.1016/s0040-6090%2800%2901722-3

• Journal Article Type: Article
• Publication Date: 2001-05
• Journal: Thin Solid Films
• Print ISSN: 0040-6090
• Electronic ISSN: 1879-2731
• Publisher: Elsevier
• Peer Reviewed: Peer Reviewed
• Volume: 387
• Issue: 1-2
• Pages: 89-91
• DOI: https://doi.org/10.1016/s0040-6090%2800%2901722-3
• Public URL: https://durham-repository.worktribe.com/output/1611390