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Effect of interdiffusion and impurities on thin film CdTe/CdS photovoltaic junctions

Potter, M.D.G.; Cousins, M.; Durose, K.; Halliday, D.P.

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Authors

M.D.G. Potter

M. Cousins

K. Durose



Abstract

We have used low temperature photoluminescence (PL) to study thin film CdTe/CdS solar cell structures. The devices were produced by close space sublimation (CSS) and have undergone a post-growth treatment, a vital step in increasing device efficiency. The treatment consisted of evaporating a thin layer of CdCl2 onto the back CdTe surface and heat treating in air at 400 °C for between 10 and 120 min. This produced a range of device efficiencies from 2% to 9%. The efficiency improvements are the result of a complex interaction between the CdCl2, impurities and sulfur interdiffusion. The structures were prepared for PL by a chemical bevel etching technique which allows the luminescence emission to be studied as a function of depth throughout the sample. The main features in the PL spectra have been identified as being due to the Cl-A center and the Te-dislocation-related Y luminescence band. Using PL we have quantified the S diffusion into the CdTe which has a maximum of 20% at the interface in the most efficient samples. We have also obtained the profiles of recombination and non-radiative recombination centers in the device. We observe correlations between impurity centers and device efficiency which can help explain the effects of the CdCl2 treatment on the optoelectronic properties of the CdTe/CdS junction.

Citation

Potter, M., Cousins, M., Durose, K., & Halliday, D. (2000). Effect of interdiffusion and impurities on thin film CdTe/CdS photovoltaic junctions. Journal of Materials Science: Materials in Electronics, 11(7), 525-530. https://doi.org/10.1023/a%3A1026565632569

Journal Article Type Article
Publication Date Oct 1, 2000
Deposit Date Jun 3, 2016
Publicly Available Date Jun 3, 2016
Journal Journal of Materials Science: Materials in Electronics
Print ISSN 0957-4522
Electronic ISSN 1573-482X
Publisher Springer
Peer Reviewed Peer Reviewed
Volume 11
Issue 7
Pages 525-530
DOI https://doi.org/10.1023/a%3A1026565632569
Public URL https://durham-repository.worktribe.com/output/1613369

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Copyright Statement
Reprinted from Journal of materials science : materials in electronics, 11(7), 2000, 525-530, with permission of Kluwer Law International.






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