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Self-consistent statistical model for current transport in polycrystalline semiconductors (2024)
Journal Article
Benford, E. L. C., & Amit, I. (2024). Self-consistent statistical model for current transport in polycrystalline semiconductors. Journal of Applied Physics, 136(12), Article 125702. https://doi.org/10.1063/5.0231350

Transport in novel materials, specifically those scaled up to wafer sizes, will be dominated by thermionic emission over charged, randomly oriented grain boundaries. However, the challenges presented by random dopant fluctuation in lightly and modera... Read More about Self-consistent statistical model for current transport in polycrystalline semiconductors.

Boron Monolayer Doping: Role of Oxide Capping Layer, Molecular Fragmentation, and Doping Uniformity at the Nanoscale (2020)
Journal Article
Tzaguy, A., Karadan, P., Killi, K., Hazut, O., Amit, I., Rosenwaks, Y., & Yerushalmi, R. (2020). Boron Monolayer Doping: Role of Oxide Capping Layer, Molecular Fragmentation, and Doping Uniformity at the Nanoscale. Advanced Materials Interfaces, 7(5), Article 1902198. https://doi.org/10.1002/admi.201902198

Doping methodologies using monolayers offer controlled, ex situ doping of nanowires (NWs), and 3D device architectures using molecular monolayers as dopant sources with uniform, self‐limiting characteristics. Comparing doping levels and uniformity fo... Read More about Boron Monolayer Doping: Role of Oxide Capping Layer, Molecular Fragmentation, and Doping Uniformity at the Nanoscale.

Accurate Method To Determine the Mobility of Transition-Metal Dichalcogenides with Incomplete Gate Screening (2019)
Journal Article
Dagan, R., Vaknin, Y., Weisman, D., Amit, I., & Rosenwaks, Y. (2019). Accurate Method To Determine the Mobility of Transition-Metal Dichalcogenides with Incomplete Gate Screening. ACS Applied Materials and Interfaces, 11(47), 44406-44412. https://doi.org/10.1021/acsami.9b12611

Van der Waals layered transition metal dichalcogenides, usually exhibit high contact resistance due to the induced Schottky barriers, which occur at non-ideal metal-semiconductor contacts. These barriers usually contribute to an underestimation in th... Read More about Accurate Method To Determine the Mobility of Transition-Metal Dichalcogenides with Incomplete Gate Screening.

Energy dispersive spectroscopic measurement of charge traps in MoTe_2 (2019)
Journal Article
Townsend, N. J., Amit, I., Panchal, V., Kazakova, O., Craciun, M. F., & Russo, S. (2019). Energy dispersive spectroscopic measurement of charge traps in MoTe_2. Physical review B, 100(16), Article 165310. https://doi.org/10.1103/physrevb.100.165310

Spectroscopic techniques are vital to determine the energy distribution of trapped states in semiconducting materials to assess the quality and efficiency of electronic devices. However, there is a need for a sensitive spectroscopic technique that ca... Read More about Energy dispersive spectroscopic measurement of charge traps in MoTe_2.

Laser-writable high-k dielectric for van der Waals nanoelectronics (2019)
Journal Article
Peimyoo, N., Barnes, M., Mehew, J., De Sanctis, A., Amit, I., Escolar, J., …Withers, F. (2019). Laser-writable high-k dielectric for van der Waals nanoelectronics. Science Advances, 5(1), https://doi.org/10.1126/sciadv.aau0906

Similar to silicon-based semiconductor devices, van der Waals heterostructures require integration with high-k oxides. Here, we demonstrate a method to embed and pattern a multifunctional few-nanometer-thick high-k oxide within various van der Waals... Read More about Laser-writable high-k dielectric for van der Waals nanoelectronics.

Strain-engineered inverse charge-funnelling in layered semiconductors (2018)
Journal Article
De Sanctis, A., Amit, I., Hepplestone, S. P., Craciun, M. F., & Russo, S. (2018). Strain-engineered inverse charge-funnelling in layered semiconductors. Nature Communications, 9, Article 1652. https://doi.org/10.1038/s41467-018-04099-7

The control of charges in a circuit due to an external electric field is ubiquitous to the exchange, storage and manipulation of information in a wide range of applications. Conversely, the ability to grow clean interfaces between materials has been... Read More about Strain-engineered inverse charge-funnelling in layered semiconductors.

Ultrahigh Performance Nanoengineered Graphene-Concrete Composites for Multifunctional Applications (2018)
Journal Article
Dimov, D., Amit, I., Gorrie, O., Barnes, M. D., Townsend, N. J., Neves, A. I., …Craciun, M. F. (2018). Ultrahigh Performance Nanoengineered Graphene-Concrete Composites for Multifunctional Applications. Advanced Functional Materials, 28(23), Article 1705183. https://doi.org/10.1002/adfm.201705183

There is a constant drive for development of ultrahigh performance multifunctional construction materials by the modern engineering technologies. These materials have to exhibit enhanced durability and mechanical performance, and have to incorporate... Read More about Ultrahigh Performance Nanoengineered Graphene-Concrete Composites for Multifunctional Applications.

Sub 20 meV Schottky barriers in metal/MoTe2 junctions (2018)
Journal Article
Townsend, N. J., Amit, I., Craciun, M. F., & Russo, S. (2018). Sub 20 meV Schottky barriers in metal/MoTe2 junctions. 2D Materials, 5(2), Article 025023. https://doi.org/10.1088/2053-1583/aab56a

he newly emerging class of atomically-thin materials has shown a high potential for the realisation of novel electronic and optoelectronic components. Amongst this family, semiconducting transition metal dichalcogenides (TMDCs) are of particular inte... Read More about Sub 20 meV Schottky barriers in metal/MoTe2 junctions.

High-Mobility and High-Optical Quality Atomically Thin WS 2 (2017)
Journal Article
Reale, F., Palczynski, P., Amit, I., Jones, G. F., Mehew, J. D., Bacon, A., …others. (2017). High-Mobility and High-Optical Quality Atomically Thin WS 2. Scientific Reports, 7(1), Article 14911. https://doi.org/10.1038/s41598-017-14928-2

The rise of atomically thin materials has the potential to enable a paradigm shift in modern technologies by introducing multi-functional materials in the semiconductor industry. To date the growth of high quality atomically thin semiconductors (e.g.... Read More about High-Mobility and High-Optical Quality Atomically Thin WS 2.

Role of charge traps in the performance of atomically thin transistors (2017)
Journal Article
Amit, I., Octon, T. J., Townsend, N. J., Reale, F., Wright, C. D., Mattevi, C., …Russo, S. (2017). Role of charge traps in the performance of atomically thin transistors. Advanced Materials, 29(19), Article 1605598. https://doi.org/10.1002/adma.201605598

Transient currents in atomically thin MoTe2 field‐effect transistors (FETs) are measured during cycles of pulses through the gate electrode. The curves of the transient currents are analyzed in light of a newly proposed model for charge‐trapping dyna... Read More about Role of charge traps in the performance of atomically thin transistors.

Functionalised hexagonal-domain graphene for position-sensitive photodetectors (2017)
Journal Article
De Sanctis, A., Barnes, M. D., Amit, I., Craciun, M. F., & Russo, S. (2017). Functionalised hexagonal-domain graphene for position-sensitive photodetectors. Nanotechnology, 28(12), Article 124004. https://doi.org/10.1088/1361-6528/aa5ec0

Graphene's unique photoresponse has been largely used in a multitude of optoelectronics applications ranging from broadband photodetectors to wave-guide modulators. In this work we extend the range of applications to position-sensitive photodetectors... Read More about Functionalised hexagonal-domain graphene for position-sensitive photodetectors.

Impact of Dopant Compensation on Graded p-n Junctions in Si Nanowires (2015)
Journal Article
Amit, I., Jeon, N., Lauhon, L. J., & Rosenwaks, Y. (2016). Impact of Dopant Compensation on Graded p-n Junctions in Si Nanowires. ACS Applied Materials and Interfaces, 8(1), 128-134. https://doi.org/10.1021/acsami.5b07746

The modulation between different doping species required to produce a diode in VLS-grown nanowires (NWs) yields a complex doping profile, both axially and radially, and a gradual junction at the interface. We present a detailed analysis of the dopant... Read More about Impact of Dopant Compensation on Graded p-n Junctions in Si Nanowires.

Potential barrier height at the grain boundaries of a poly-silicon nanowire (2015)
Journal Article
Shamir, A., Amit, I., Englander, D., Horvitz, D., & Rosenwaks, Y. (2015). Potential barrier height at the grain boundaries of a poly-silicon nanowire. Nanotechnology, 26(35), Article 355201. https://doi.org/10.1088/0957-4484/26/35/355201

We present measurements of the potential barrier height and its dependence on grain size in poly-silicon nanowire (P-SiNW) arrays. Measurements conducted using Kelvin probe force microscopy coupled with electrostatic simulations, enabled us also to e... Read More about Potential barrier height at the grain boundaries of a poly-silicon nanowire.

Density and Energy Distribution of Interface States in the Grain Boundaries of Polysilicon Nanowire (2014)
Journal Article
Amit, I., Englander, D., Horvitz, D., Sasson, Y., & Rosenwaks, Y. (2014). Density and Energy Distribution of Interface States in the Grain Boundaries of Polysilicon Nanowire. Nano Letters, 14(11), 6190-6194. https://doi.org/10.1021/nl5024468

Wafer-scale fabrication of semiconductor nanowire devices is readily facilitated by lithography-based top-down fabrication of polysilicon nanowire (P-SiNW) arrays. However, free carrier trapping at the grain boundaries of polycrystalline materials dr... Read More about Density and Energy Distribution of Interface States in the Grain Boundaries of Polysilicon Nanowire.