Density and Energy Distribution of Interface States in the Grain Boundaries of Polysilicon Nanowire

Amit, Iddo; Englander, Danny; Horvitz, Dror; Sasson, Yaniv; Rosenwaks, Yossi

Abstract

Wafer-scale fabrication of semiconductor nanowire devices is readily facilitated by lithography-based top-down fabrication of polysilicon nanowire (P-SiNW) arrays. However, free carrier trapping at the grain boundaries of polycrystalline materials drastically changes their properties. We present here transport measurements of P-SiNW array devices coupled with Kelvin probe force microscopy at different applied biases. By fitting the measured P-SiNW surface potential using electrostatic simulations, we extract the longitudinal dopant distribution along the nanowires as well as the density of grain boundaries interface states and their energy distribution within the band gap.

Citation

Amit, I., Englander, D., Horvitz, D., Sasson, Y., & Rosenwaks, Y. (2014). Density and Energy Distribution of Interface States in the Grain Boundaries of Polysilicon Nanowire. Nano Letters, 14(11), 6190-6194. https://doi.org/10.1021/nl5024468

• Journal Article Type: Article
• Acceptance Date: Jun 30, 2014
• Online Publication Date: Oct 13, 2014
• Publication Date: Nov 12, 2014
• Deposit Date: Jul 5, 2018
• Publicly Available Date: Jul 31, 2018
• Journal: Nano Letters
• Print ISSN: 1530-6984
• Electronic ISSN: 1530-6992
• Publisher: American Chemical Society
• Peer Reviewed: Peer Reviewed
• Volume: 14
• Issue: 11
• Pages: 6190-6194
• DOI: https://doi.org/10.1021/nl5024468
• Public URL: https://durham-repository.worktribe.com/output/1326949