Compositional tuning of atomic layer deposited MgZnO for thin film transistors

Wrench, J.S.; Brunell, I.F.; Chalker, P.R.; Jin, J.D.; Shaw, A.; Mitrovic, I.Z.; Hall, S.

doi:10.1063/1.4902389

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Compositional tuning of atomic layer deposited MgZnO for thin film transistors (2014)
Journal Article
Wrench, J., Brunell, I., Chalker, P., Jin, J., Shaw, A., Mitrovic, I., & Hall, S. (2014). Compositional tuning of atomic layer deposited MgZnO for thin film transistors. Applied Physics Letters, 105(20), Article 202109. https://doi.org/10.1063/1.4902389

Thin film transistors (TFTs) have been fabricated using magnesium zinc oxide (MgZnO) layers deposited by atomic layer deposition at 200 °C. The composition of the MgZnO is systematically modified by varying the ratio of MgO and ZnO deposition cycles.... Read More about Compositional tuning of atomic layer deposited MgZnO for thin film transistors.