Electrical behavior of memory devices based on fluorene-containing organic thin films
(2008)
Journal Article
Dimitrakis, P., Normand, P., Tsoukalas, D., Pearson, C., Ahn, J., Mabrook, M., …Green, M. (2008). Electrical behavior of memory devices based on fluorene-containing organic thin films. Journal of Applied Physics, 104(4), Article 044510. https://doi.org/10.1063/1.2968551
We report on switching and negative differential resistance (NDR) behaviors of crossed bar electrode structures based on Al/organic layer/Al devices in which the organic layer was a spin-coated layer of 7-{4-[5-(4-tert-butylphenyl)-1,3,4-oxadiazol-2-... Read More about Electrical behavior of memory devices based on fluorene-containing organic thin films.