A k.p model for carrier capture by a quantum well.
(1995)
Journal Article
Crow, G., & Abram, R. (1995). A k.p model for carrier capture by a quantum well. Semiconductor Science and Technology, 10, 1221-1228
All Outputs (165)
An investigation of graded and uniform base Ge<SUB>x</SUB>Si<SUB>1-x</SUB> HBTs using a Monte Carlo simulation. (1995)
Journal Article
Hughes, D., Abram, R., & Kelsall, R. (1995). An investigation of graded and uniform base GexSi1-x HBTs using a Monte Carlo simulation. IEEE Transactions on Electron Devices, 42, 201-208
Avalanche multiplication properties of GaAs calculated from spatially transient ionization coefficients. (1995)
Journal Article
Wilson, S., Brand, S., & Abram, R. (1995). Avalanche multiplication properties of GaAs calculated from spatially transient ionization coefficients. Solid-State Electronics, 38, 2095-2100
A k.p model for hole capture into a quantum well. (1994)
Journal Article
Crow, G., & Abram, R. (1994). A k.p model for hole capture into a quantum well. Superlattices and Microstructures, 15, 127-127
The use of realistic band structure in impact ionization calculations for wide bandgap semiconductors - application to InP and GaAs. (1993)
Journal Article
Wilson, S., Brand, S., Beattie, A., & Abram, R. (1993). The use of realistic band structure in impact ionization calculations for wide bandgap semiconductors - application to InP and GaAs. COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 12, 457-473
Effects of heavy doping and high-excitation on the band structure of gallium arsenide. (1993)
Journal Article
Abram, R. (1993). Effects of heavy doping and high-excitation on the band structure of gallium arsenide
The use of realistic band structure in impact ionization calculations for wide bandgap semiconductors: thresholds and anti-thresholds in indium phosphide. (1993)
Journal Article
Wilson, S., Brand, S., Beattie, A., & Abram, R. (1993). The use of realistic band structure in impact ionization calculations for wide bandgap semiconductors: thresholds and anti-thresholds in indium phosphide. Semiconductor Science and Technology, 8, 1546-1556
Monte Carlo simulations of low-field hole transport in strained InGaAs quantum wells. (1993)
Journal Article
Crow, G., Kelsall, R., & Abram, R. (1993). Monte Carlo simulations of low-field hole transport in strained InGaAs quantum wells. Semiconductor Science and Technology, 8, 219-223
The use of realistic band structure in impact ionization calculations for wide bandgap semiconductors: thresholds, anti-thresholds and rates in GaAs and AlGaAs. (1993)
Journal Article
Wilson, S., Brand, S., Beattie, A., & Abram, R. (1993). The use of realistic band structure in impact ionization calculations for wide bandgap semiconductors: thresholds, anti-thresholds and rates in GaAs and AlGaAs. Semiconductor Science and Technology, 8, 1944-1956
Ultrafast nonlinear optical response of quantum wells with one and two conduction subbands. (1993)
Journal Article
Walmsley, M., Abram, R., & Burt, M. (1993). Ultrafast nonlinear optical response of quantum wells with one and two conduction subbands. Semiconductor Science and Technology, 8, 268-275
A comparison of transient velocity overshoot in Si and GaAs structures. (1992)
Journal Article
Hughes, D., Abram, R., Kelsall, R., & Holden, A. (1992). A comparison of transient velocity overshoot in Si and GaAs structures. Semiconductor Science and Technology, 7, B390-B393
Monte Carlo simulation of electron transport in GaAs/Ga<SUB>1-x</SUB>Al<SUB>x</SUB>As quantum wells using different phonon models. (1992)
Journal Article
Chamberlain, M., Hoare, D., Kelsall, R., & Abram, R. (1992). Monte Carlo simulation of electron transport in GaAs/Ga1-xAlxAs quantum wells using different phonon models. Semiconductor Science and Technology, 7, B45-B48
Monte Carlo simulation of hole mobilities in an InGaAs/GaAs strained layer quantum well. (1992)
Journal Article
Kelsall, R., Abram, R., Batty, W., & O'Reilly, E. (1992). Monte Carlo simulation of hole mobilities in an InGaAs/GaAs strained layer quantum well. Semiconductor Science and Technology, 7, 86-91
Hole impactionization rates in InP and In<SUB>0.53</SUB>Ga<SUB>0.47</SUB>As. (1992)
Journal Article
Beattie, A., Abram, R., & Scharoch, P. (1992). Hole impactionization rates in InP and In0.53Ga0.47As. Semiconductor Science and Technology, 7, B512-B516
Monte Carlo simulations of field and carrier density-dependent hole transport in an InGaAs/GaAs strained layer quantum well. (1992)
Journal Article
Kelsall, R., & Abram, R. (1992). Monte Carlo simulations of field and carrier density-dependent hole transport in an InGaAs/GaAs strained layer quantum well. Semiconductor Science and Technology, 7, 312-B315
Optical properties of InGaAs/InP strained quantum wells (1991)
Journal Article
Abram, R., Wood, A., & Robbins, D. (1991). Optical properties of InGaAs/InP strained quantum wells. Proceedings of SPIE, 1361, 424-433. https://doi.org/10.1117/12.24411
Phonon scattering and mobility of holes in a GaAs/AlAs quantum well. (1991)
Journal Article
Kelsall, R., Wood, A., & Abram, R. (1991). Phonon scattering and mobility of holes in a GaAs/AlAs quantum well. Semiconductor Science and Technology, 6, 841-849
Simulation of electron transport in a (GaAs)₁₂/(AlAs)₁₂ superlattice. (1991)
Journal Article
Warren, G., Brand, S., Abram, R., & Kelsall, R. (1991). Simulation of electron transport in a (GaAs)₁₂/(AlAs)₁₂ superlattice. Semiconductor Science and Technology, 6, 784-789
A detailed study of Auger recombination in 1.3 micron InGaAsP/InP quantum wells and quantum well wires. (1990)
Journal Article
Taylor, R., Abram, R., Burt, M., & Smith, C. (1990). A detailed study of Auger recombination in 1.3 micron InGaAsP/InP quantum wells and quantum well wires. Semiconductor Science and Technology, 5, 90-104
Matrix elements for hole-phonon scattering in a semiconductor quantum well. (1990)
Journal Article
Kelsall, R., Taylor, R., Wood, A., & Abram, R. (1990). Matrix elements for hole-phonon scattering in a semiconductor quantum well. Semiconductor Science and Technology, 5, 877-883