RW Kelsall
Monte Carlo simulation of hole mobilities in an InGaAs/GaAs strained layer quantum well.
Kelsall, RW; Abram, RA; Batty, W; O'Reilly, EP
Citation
Kelsall, R., Abram, R., Batty, W., & O'Reilly, E. (1992). Monte Carlo simulation of hole mobilities in an InGaAs/GaAs strained layer quantum well. Semiconductor Science and Technology, 7, 86-91
| Journal Article Type | Article |
|---|---|
| Publication Date | 1992 |
| Journal | Semiconductor Science and Technology |
| Print ISSN | 0268-1242 |
| Electronic ISSN | 1361-6641 |
| Publisher | IOP Publishing |
| Volume | 7 |
| Pages | 86-91 |
| Public URL | https://durham-repository.worktribe.com/output/1619687 |
| Publisher URL | http://adsabs.harvard.edu/cgi-bin/nph-bib_query?bibcode=1992SeScT...7...86K&db_key=PHY |
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