The use of realistic band structure in impact ionization calculations for wide bandgap semiconductors: thresholds, anti-thresholds and rates in GaAs and AlGaAs.

Wilson, SP; Brand, S; Beattie, AR; Abram, RA

The use of realistic band structure in impact ionization calculations for wide bandgap semiconductors: thresholds, anti-thresholds and rates in GaAs and AlGaAs.

Wilson, SP; Brand, S; Beattie, AR; Abram, RA

Authors

SP Wilson

S Brand

AR Beattie

Richard Abram r.a.abram@durham.ac.uk

Citation

Wilson, S., Brand, S., Beattie, A., & Abram, R. (1993). The use of realistic band structure in impact ionization calculations for wide bandgap semiconductors: thresholds, anti-thresholds and rates in GaAs and AlGaAs. Semiconductor Science and Technology, 8, 1944-1956

Journal Article Type	Article
Publication Date	1993
Journal	Semiconductor Science and Technology
Print ISSN	0268-1242
Electronic ISSN	1361-6641
Publisher	IOP Publishing
Volume	8
Pages	1944-1956
Public URL	https://durham-repository.worktribe.com/output/1619725
Publisher URL	http://adsabs.harvard.edu/cgi-bin/nph-bib_query?bibcode=1993SeScT...8.1944W&db_key=PHY

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