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Hole impactionization rates in InP and In<SUB>0.53</SUB>Ga<SUB>0.47</SUB>As.

Beattie, AR; Abram, RA; Scharoch, P

Authors

AR Beattie

P Scharoch



Citation

Beattie, A., Abram, R., & Scharoch, P. (1992). Hole impactionization rates in InP and In0.53Ga0.47As. Semiconductor Science and Technology, 7, B512-B516

Journal Article Type Article
Publication Date 1992
Journal Semiconductor Science and Technology
Print ISSN 0268-1242
Electronic ISSN 1361-6641
Publisher IOP Publishing
Volume 7
Pages B512-B516
Public URL https://durham-repository.worktribe.com/output/1619708
Publisher URL http://adsabs.harvard.edu/cgi-bin/nph-bib_query?bibcode=1992SeScT...7B.512B&db_key=PHY



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