SP Wilson
The use of realistic band structure in impact ionization calculations for wide bandgap semiconductors - application to InP and GaAs.
Wilson, SP; Brand, S; Beattie, AR; Abram, RA
Citation
Wilson, S., Brand, S., Beattie, A., & Abram, R. (1993). The use of realistic band structure in impact ionization calculations for wide bandgap semiconductors - application to InP and GaAs. COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 12, 457-473
| Journal Article Type | Article |
|---|---|
| Publication Date | 1993 |
| Journal | COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering |
| Print ISSN | 0332-1649 |
| Publisher | Emerald |
| Volume | 12 |
| Pages | 457-473 |
| Public URL | https://durham-repository.worktribe.com/output/1581523 |
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