Quality enhancement of AZO thin films at various thicknesses by introducing ITO buffer layer

Rezaie, Mahdiyar Nouri; Manavizadeh, Negin; Nadimi, Ebrahim; Boroumand, Farhad Akbari

Abstract

Due to the simultaneously superior optical transmittance and low electrical resistivity, transparent conductive electrodes play a significant role in semiconductor electronics. To enhance the electrical properties of these films, one approach is thickness increment which degrades the optical properties. However, a preferred way to optimize both electrical and optical properties of these layers is to introduce a buffer layer. In this work, the effects of buffer layer and film thickness on the structural, electrical, optical and morphological properties of AZO thin films are investigated. Al-doped zinc oxide (AZO) is prepared at various thicknesses of 100 to 300 nm on the bare and 100 nm-thick indium tin oxide (ITO) coated glass substrates by radio frequency sputtering. Results demonstrate that by introducing ITO as a buffer layer, the average values of sheet resistance and strain within the film are decreased (about 76 and 3.3 times lower than films deposited on bare glasses), respectively. Furthermore, the average transmittance of ITO/AZO bilayer is improved nearly 10% regarding single AZO thin film. This indicates that bilayer thin films show better physical properties rather than conventional monolayer thin films. As the AZO film thickness increases, the interplanar spacing, d(002), strain within the film and compressive stress of the film in the hexagonal lattice, decreases indicating the higher yield of AZO crystal. Moreover, with the growth in film thickness, carrier concentration and optical band gap (Eg) of AZO film are increased from 4.62 × 1019 to 8.21 × 1019 cm−3 and from 3.55 to 3.62 eV, respectively due to the Burstein-Moss (BM) effect. The refractive index of AZO thin film is obtained in the range of 2.24–2.26. With the presence of ITO buffer layer, the AZO thin film exhibits a resistivity as low as 6 × 10−4 Ω cm, a sheet resistance of 15 Ω/sq and a high figure of merit (FOM) of 1.19 × 104 (Ω cm)−1 at a film thickness of 300 nm. As a result, the quality of AZO thin films deposited on ITO buffer layer is found to be superior regarding those grown on a bare glass substrate. This study has been performed over these two substrates because of their significant usage in the organic light emitting diodes and photovoltaic applications as an enhanced carrier injecting electrodes.

Citation

Rezaie, M. N., Manavizadeh, N., Nadimi, E., & Boroumand, F. A. (2017). Quality enhancement of AZO thin films at various thicknesses by introducing ITO buffer layer. Journal of Materials Science: Materials in Electronics, 28(13), 9328-9337. https://doi.org/10.1007/s10854-017-6671-6

• Journal Article Type: Article
• Acceptance Date: Feb 26, 2017
• Online Publication Date: Mar 10, 2017
• Publication Date: 2017-07
• Deposit Date: Dec 15, 2023
• Journal: Journal of Materials Science: Materials in Electronics
• Print ISSN: 0957-4522
• Electronic ISSN: 1573-482X
• Publisher: Springer
• Peer Reviewed: Peer Reviewed
• Volume: 28
• Issue: 13
• Pages: 9328-9337
• DOI: https://doi.org/10.1007/s10854-017-6671-6
• Public URL: https://durham-repository.worktribe.com/output/2027498