Skip to main content

Research Repository

Advanced Search

Twinning in vapour-grown, large volume Cd1-xZnxTe crystals

Tanner, B.K.; Mullins, J.T.; Pym, A.T.G.; Maneuski, D.

Twinning in vapour-grown, large volume Cd1-xZnxTe crystals Thumbnail


B.K. Tanner

J.T. Mullins

A.T.G. Pym

D. Maneuski


The onset of twinning from View the MathML source to View the MathML source in large volume Cd1−xZnx Te crystals, grown by vapour transport on View the MathML source, often referred to as (211)B, oriented GaAs seeds, has been investigated using X-ray diffraction imaging (X-ray topography). Twinning is not associated with strains at the GaAs/CdTe interface as the initial growth was always in View the MathML source orientation. Nor is twinning related to lattice strains associated with injection of Zn subsequent to initial nucleation and growth of pure CdTe as in both cases twinning occurred after growth of several mm length of Cd1−xZnxTe. While in both cases examined, there was a region of disturbed growth prior to the twinning transition, in neither crystal does this strain appear to have nucleated the twinning process. In both cases, un-twinned material remained after twinning was observed, the scale of the resulting twin boundaries being sub-micron. Simultaneous twinning across the whole sample surface was observed in one sample, whereas in the other, twinning was nucleated at different points and times in the growth.


Tanner, B., Mullins, J., Pym, A., & Maneuski, D. (2016). Twinning in vapour-grown, large volume Cd1-xZnxTe crystals. Journal of Crystal Growth, 448, 44-50.

Journal Article Type Article
Acceptance Date May 9, 2016
Online Publication Date May 10, 2016
Publication Date Aug 15, 2016
Deposit Date Jun 8, 2016
Publicly Available Date May 10, 2017
Journal Journal of Crystal Growth
Print ISSN 0022-0248
Publisher Elsevier
Peer Reviewed Peer Reviewed
Volume 448
Pages 44-50


You might also like

Downloadable Citations