High-Mobility, Heterostructure Light-Emitting Transistors and Complementary Inverters

Ullah, Mujeeb; Tandy, Kristen; Li, Jun; Shi, Zugui; Burn, Paul L.; Meredith, Paul; Namdas, Ebinazar B.

Abstract

Light-emitting field effect transistors (LEFETs) are optoelectronic devices that can simultaneously execute light emission and the standard logic functions of a transistor in a single device architecture. In this article, we show that ambipolar LEFETs can be made in a bilayer structure using Super Yellow, a light-emitting polymer layer, and a high-mobility diketopyrrolo-pyrrole-based copolymer as an ambipolar charge-transporting layer. The LEFETs were fabricated in the bottom gate architecture with top-contact, air-stable, symmetric Au–Au electrodes. The devices show light emission in both electron and hole accumulation modes with an external quantum efficiency (EQE) of 0.1% at a brightness of 650 cd/m2 in electron accumulation mode, and an EQE of 0.001% at a brightness of 4 cd/m2 in hole accumulation mode. We have also demonstrated a light-emitting inverter by combining two LEFETs into the inverter architecture. The light-emitting inverter generates both electrical and optical signals with an electrical gain of 112.

Citation

Ullah, M., Tandy, K., Li, J., Shi, Z., Burn, P. L., Meredith, P., & Namdas, E. B. (2014). High-Mobility, Heterostructure Light-Emitting Transistors and Complementary Inverters. ACS Photonics, 1(10), 954-959. https://doi.org/10.1021/ph500300n

• Journal Article Type: Article
• Online Publication Date: Sep 17, 2014
• Publication Date: 2014-10
• Deposit Date: Apr 13, 2017
• Journal: ACS Photonics
• Electronic ISSN: 2330-4022
• Publisher: American Chemical Society
• Peer Reviewed: Peer Reviewed
• Volume: 1
• Issue: 10
• Pages: 954-959
• DOI: https://doi.org/10.1021/ph500300n