Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers

Acar, Gizem; Iqbal, Muhammad Javaid; Chaudhry, Mujeeb Ullah

Abstract

Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and stable emission area, and high switching speed are the limiting factors for to realise their applications. Herein, we present a p-type polymer heterostructure-based LEFET architecture with electron and hole injection interlayers to improve the charge injection into the light-emitting layer, which leads to better recombination. This device structure provides access to hole mobility of ~2.1 cm2 V−1 s−1 and EQE of 1.6% at a luminance of 2600 cd m−2. Most importantly, we observed a large area emission under the entire drain electrode, which was spatially stable (emission area is not dependent on the gate voltage and current density). These results show an important advancement in polymer-based LEFET technology toward realizing new digital display applications.

Citation

Acar, G., Iqbal, M. J., & Chaudhry, M. U. (2021). Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers. Materials, 14(4), https://doi.org/10.3390/ma14040901

• Journal Article Type: Article
• Acceptance Date: Feb 7, 2021
• Online Publication Date: Feb 14, 2021
• Publication Date: 2021
• Deposit Date: Oct 19, 2021
• Publicly Available Date: Oct 19, 2021
• Journal: Materials
• Print ISSN: 1996-1944
• Electronic ISSN: 1996-1944
• Publisher: MDPI
• Peer Reviewed: Peer Reviewed
• Volume: 14
• Issue: 4
• DOI: https://doi.org/10.3390/ma14040901
• Public URL: https://durham-repository.worktribe.com/output/1226217