Hybrid Light-Emitting Transistors Based on Low-Temperature Solution-Processed Metal Oxides and a Charge-Injecting Interlayer

Ullah, Mujeeb; Lin, Yen-Hung; Muhieddine, Khalid; Lo, Shih-Chun; Anthopoulos, Thomas D.; Namdas, Ebinazar B.

doi:10.1002/adom.201500474

Hybrid Light-Emitting Transistors Based on Low-Temperature Solution-Processed Metal Oxides and a Charge-Injecting Interlayer

Ullah, Mujeeb; Lin, Yen-Hung; Muhieddine, Khalid; Lo, Shih-Chun; Anthopoulos, Thomas D.; Namdas, Ebinazar B.

Authors

Mujeeb Ullah

Yen-Hung Lin

Khalid Muhieddine

Shih-Chun Lo

Thomas D. Anthopoulos

Ebinazar B. Namdas

Contributors

Dr Mujeeb Chaudhry mujeeb.u.chaudhry@durham.ac.uk
Other

Abstract

The performance of solution and low-temperature processed hybrid light-emitting field-effect transistors is enahnced by a new development strategy. The manipulation of the work function at the oxide/polymer interface is presented for achieving high all-round performance in these devices.

Citation

Ullah, M., Lin, Y., Muhieddine, K., Lo, S., Anthopoulos, T. D., & Namdas, E. B. (2016). Hybrid Light-Emitting Transistors Based on Low-Temperature Solution-Processed Metal Oxides and a Charge-Injecting Interlayer. Advanced Optical Materials, 4(2), 231-237. https://doi.org/10.1002/adom.201500474

Journal Article Type	Article
Acceptance Date	Oct 15, 2015
Online Publication Date	Nov 19, 2015
Publication Date	2016-02
Deposit Date	Apr 13, 2017
Journal	Advanced Optical Materials
Publisher	Wiley
Peer Reviewed	Peer Reviewed
Volume	4
Issue	2
Pages	231-237
DOI	https://doi.org/10.1002/adom.201500474