Erratum: Electronic processes in double-barrier resonant-tunneling structures studied by photoluminescence spectroscopy in zero and finite magnetic fields [Phys. Rev. B 41, 10754 (1990)]
(1990)
Journal Article
Skolnick, M., Hayes, D., Simmonds, P., Higgs, A., Smith, G., Hutchinson, H., …Halliday, D. (1990). Erratum: Electronic processes in double-barrier resonant-tunneling structures studied by photoluminescence spectroscopy in zero and finite magnetic fields [Phys. Rev. B 41, 10754 (1990)]. Physical Review B (Condensed Matter), 42, 5364-. https://doi.org/10.1103/physrevb.42.5364
Outputs (94)
Residual Impurities In Autodoped Normal-gaas Grown By Mbe (1989)
Journal Article
Stanaway, M., Grimes, R., Halliday, D., Chamberlain, J., Henini, M., Hughes, O., Davies, M., & Hill, G. (1989). Residual Impurities In Autodoped Normal-gaas Grown By Mbe. Institute of physics conference series, 295-300
Zeeman spectroscopy of the defect-induced bound-exciton lines in GaAs grown by molecular-beam epitaxy (1988)
Journal Article
Skolnick, M., Halliday, D., & Tu, C. (1988). Zeeman spectroscopy of the defect-induced bound-exciton lines in GaAs grown by molecular-beam epitaxy. Physical Review B (Condensed Matter), 38, 4165-4179. https://doi.org/10.1103/physrevb.38.4165
Optical-properties and zeeman spectroscopy of Ti-doped GaP and GaAs (1988)
Journal Article
Payling, C., Halliday, D., Hayes, D., Saker, M., Skolnick, M., Ulrici, W., & Eaves, L. (1988). Optical-properties and zeeman spectroscopy of Ti-doped GaP and GaAs. Institute of physics conference series, 91, 125-128
Compensation ratios and electron mobility in high-purity n-InP: photoluminescence and far-infrared studies of a new theoretical relationship (1988)
Journal Article
Rikken, G., Wyder, P., Chamberlain, J., Grimes, R., & Halliday, D. (1988). Compensation ratios and electron mobility in high-purity n-InP: photoluminescence and far-infrared studies of a new theoretical relationship. Semiconductor Science and Technology, 3, 302-305
Optical And Electrical Studies Of Gap-ti (1988)
Journal Article
Ulrici, W., Friedland, K., Eaves, L., Halliday, D., & Payling, C. (1988). Optical And Electrical Studies Of Gap-ti. physica status solidi (b) – basic solid state physics, 150, 177-190
Investigations Of Recombination Mechanisms In The Pulsed Far Infra-red Photoresponse Of N-inp (1988)
Journal Article
Rikken, G., Wyder, P., Chamberlain, J., Halliday, D., & Grimes, R. (1988). Investigations Of Recombination Mechanisms In The Pulsed Far Infra-red Photoresponse Of N-inp. Solid-State Electronics, 31, 763-766. https://doi.org/10.1016/0038-1101%2888%2990384-x
Optical Studies Of Vanadium In Gallium-phosphide (1987)
Journal Article
Ulrici, W., Eaves, L., Friedland, K., & Halliday, D. (1987). Optical Studies Of Vanadium In Gallium-phosphide. physica status solidi (b) – basic solid state physics, 141, 191-202. https://doi.org/10.1002/pssb.2221410118
LETTER TO THE EDITOR: Zeeman spectroscopy on Ti-doped GaAs and GaP (1987)
Journal Article
Halliday, D., Payling, C., Saker, M., Skolnick, M., Ulrici, W., & Eaves, L. (1987). LETTER TO THE EDITOR: Zeeman spectroscopy on Ti-doped GaAs and GaP. Semiconductor Science and Technology, 2, 679-682
Optical, electrical and EPR studies of GaAs:Ni. (1986)
Book Chapter
Ulrici, W., Eaves, L., Friedland, K., Halliday, D., Kreissl, J., & Ulrici, B. (1986). Optical, electrical and EPR studies of GaAs:Ni. In H. von Bardeleben (Ed.), Defects in Semiconductors 14. Proceedings of the 14th International Conference on Defects in Semiconductors (ICDS-14), Paris, France, 1986 (669-674). Trans Tech Publications