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Optical, electrical and EPR studies of GaAs:Ni.

Ulrici, W.; Eaves, L.; Friedland, K.; Halliday, D.P.; Kreissl, J.; Ulrici, B.

Authors

W. Ulrici

L. Eaves

K. Friedland

J. Kreissl

B. Ulrici



Contributors

H.J. von Bardeleben
Editor

Citation

Ulrici, W., Eaves, L., Friedland, K., Halliday, D., Kreissl, J., & Ulrici, B. (1986). Optical, electrical and EPR studies of GaAs:Ni. In H. von Bardeleben (Ed.), Defects in Semiconductors 14. Proceedings of the 14th International Conference on Defects in Semiconductors (ICDS-14), Paris, France, 1986 (669-674). Trans Tech Publications

Publication Date 1986
Publisher Trans Tech Publications
Pages 669-674
Series Number 10-12
Book Title Defects in Semiconductors 14. Proceedings of the 14th International Conference on Defects in Semiconductors (ICDS-14), Paris, France, 1986.
Public URL https://durham-repository.worktribe.com/output/1689591