Skip to main content

Research Repository

Advanced Search

Transport critical current measurements of a HIP'ed and unHIP'ed bulksamples of PbMo6S8 in magnetic fields up to 12 Tesla (1995)
Conference Proceeding
Hamid, H., Zheng, D., & Hampshire, D. (1995). Transport critical current measurements of a HIP'ed and unHIP'ed bulksamples of PbMo6S8 in magnetic fields up to 12 Tesla.

Transport critical current measurements have been made on bulk PbMo6S8 (PMS) samples from 5 K up to T-c in magnetic fields up to 12 T. The properties of hot isostatically pressed (HIP'ed) PMS fabricated at 1.3x10(8) N.m(-2)(1300 bar) are compared wit... Read More about Transport critical current measurements of a HIP'ed and unHIP'ed bulksamples of PbMo6S8 in magnetic fields up to 12 Tesla.

An ac superconducting Nb3Sn coil for use in high magnetic fields (1995)
Book Chapter
Ramsbottom, H., Hampshire, D., Jones, H., & Smathers, D. (1995). An ac superconducting Nb3Sn coil for use in high magnetic fields. In D. Dew-Hughes (Ed.), Applied Superconductivity 1995 : Proceedings of Eucas 1995, the Second European Conference on Applied Conductivity, Held in Edinburgh, Scotland (727-730). IOP Publishing

Many different magnetic measurements require a large ac. magnetic field to be produced in a high background dc. magnetic field This paper describes the design, construction and performance of an ac. superconducting Nb3Sn coil. It is wound on a non-ma... Read More about An ac superconducting Nb3Sn coil for use in high magnetic fields.

Structural studies of semiconductors at very high pressures (1995)
Journal Article
Maclean, J., Hatton, P., Piltz, R., Crain, J., & Cernik, R. (1995). Structural studies of semiconductors at very high pressures. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 97, 354-357

In situ X-ray topography studies during the molecular beam epitaxy growth of InGaAs on (001) GaAs: effects of substrate dislocation distribution on strain relaxation (1995)
Journal Article
Barnett, S., Keir, A., Cullis, A., Johnson, A., Jefferson, J., Smith, G., …Castelli, C. (1995). In situ X-ray topography studies during the molecular beam epitaxy growth of InGaAs on (001) GaAs: effects of substrate dislocation distribution on strain relaxation. Journal of Physics D: Applied Physics, 28, A17-A22