Recent advance in high manufacturing readiness level and high temperature CMOS mixed-signal integrated circuits on silicon carbide
(2017)
Journal Article
Weng, M., Clark, D., Wright, S., Gordon, D., Duncan, M., Kirkham, S., …Horsfall, A. (2017). Recent advance in high manufacturing readiness level and high temperature CMOS mixed-signal integrated circuits on silicon carbide. Semiconductor Science and Technology, 32(5), Article 054003. https://doi.org/10.1088/1361-6641/aa61de
A high manufacturing readiness level silicon carbide (SiC) CMOS technology is presented. The unique process flow enables the monolithic integration of pMOS and nMOS transistors with passive circuit elements capable of operation at temperatures of 300... Read More about Recent advance in high manufacturing readiness level and high temperature CMOS mixed-signal integrated circuits on silicon carbide.