3D structures for silicon carbide transistors utilising Al2O3 as a gate dielectric
(2021)
Journal Article
Idris, M. I., & Horsfall, A. B. (2021). 3D structures for silicon carbide transistors utilising Al2O3 as a gate dielectric. Materials Science in Semiconductor Processing, 128, https://doi.org/10.1016/j.mssp.2021.105727
This paper reports on the first investigation of the characteristics of 3D structures formed in silicon carbide for the realisation of ultra-high performance nanoscale transistors, based on the FINFET topology. Capacitance–voltage characteristics sho... Read More about 3D structures for silicon carbide transistors utilising Al2O3 as a gate dielectric.