Electroluminescence from porous silicon using a conducting polyaniline contact

Halliday, D.P.; Holland, E.R.; Eggleston, J.M.; Adams, P.N.; Cox, S.E.; Monkman, A.P.

doi:10.1016/0040-6090(95)08102-x

All Outputs (1)

Electroluminescence from porous silicon using a conducting polyaniline contact (1996)
Journal Article
Halliday, D., Holland, E., Eggleston, J., Adams, P., Cox, S., & Monkman, A. (1996). Electroluminescence from porous silicon using a conducting polyaniline contact. Thin Solid Films, 276(1-2), 299-302. https://doi.org/10.1016/0040-6090%2895%2908102-x

We have fabricated a p-n junction using a p-type conducting polyaniline layer deposited on an n-type porous silicon layer. This junction shows rectifying behaviour. The I–V curves can be fitted to a Schottky barrier model with a barrier height of 0.8... Read More about Electroluminescence from porous silicon using a conducting polyaniline contact.