All Outputs (3)

Indigo - A Natural Pigment for High Performance Ambipolar Organic Field Effect Transistors and Circuits (2011)
Journal Article
Irimia-Vladu, M., Głowacki, E. D., Troshin, P. A., Schwabegger, G., Leonat, L., Susarova, D. K., …Sariciftci, N. S. (2012). Indigo - A Natural Pigment for High Performance Ambipolar Organic Field Effect Transistors and Circuits. Advanced Materials, 24(3), 375-380. https://doi.org/10.1002/adma.201102619

Millenniums-old natural dye indigo - a “new” ambipolar organic semiconductor. Indigo shows balanced electron and hole mobilities of 1 × 10−2 cm2 V−1 s−1 and good stability against degradation in air. Inverters with gains of 105 in the first and 110 i... Read More about Indigo - A Natural Pigment for High Performance Ambipolar Organic Field Effect Transistors and Circuits.

Effect of source-drain electric field on the Meyer–Neldel energy in organic field effect transistors (2011)
Journal Article
Ullah, M., Pivrikas, A., Fishchuk, I., Kadashchuk, A., Stadler, P., Simbrunner, C., …Sitter, H. (2011). Effect of source-drain electric field on the Meyer–Neldel energy in organic field effect transistors. Applied Physics Letters, 98(22), https://doi.org/10.1063/1.3584131

We studied the influence of the lateral source-drain electric field on the Meyer–Neldel phenomenon observed for the charge mobility measured in C60-based organic field effect transistors (OFETs). It was found that the characteristic Meyer-Neldel temp... Read More about Effect of source-drain electric field on the Meyer–Neldel energy in organic field effect transistors.

Electric field dependent activation energy of electron transport in fullerene diodes and field effect transistors: Gill’s law (2011)
Journal Article
Pivrikas, A., Ullah, M., Sitter, H., & Sariciftci, N. (2011). Electric field dependent activation energy of electron transport in fullerene diodes and field effect transistors: Gill’s law. Applied Physics Letters, 98(9), Article 092114. https://doi.org/10.1063/1.3557503

The electric field and temperature dependence of the electron mobility is studied comparatively in the bulk of fullerene (C60) diodes and at the interface with dielectric of organic field effect transistors (OFETs). Electron mobility values follow... Read More about Electric field dependent activation energy of electron transport in fullerene diodes and field effect transistors: Gill’s law.