All Outputs (6)

Switching and memory characteristics of thin films of an ambipolar organic compound: effects of device processing and electrode materials (2014)
Journal Article
Lee, M., Pearson, C., Moon, T., Fisher, A., & Petty, M. (2014). Switching and memory characteristics of thin films of an ambipolar organic compound: effects of device processing and electrode materials. Journal of Physics D: Applied Physics, 47(48), https://doi.org/10.1088/0022-3727/47/48/485103

We report on the effects of device processing conditions, and of changing the electrode materials, on the switching and negative differential resistance (NDR) behaviour of metal/organic thin film/metal structures. The organic material was an ambipola... Read More about Switching and memory characteristics of thin films of an ambipolar organic compound: effects of device processing and electrode materials.

Zinc oxide thin-film transistors fabricated at low temperature by chemical spray pyrolysis (2014)
Journal Article
Jeong, Y., Pearson, C., Lee, Y., Winchester, L., Hwang, J., Kim, H., …Petty, M. (2014). Zinc oxide thin-film transistors fabricated at low temperature by chemical spray pyrolysis. Journal of Electronic Materials, 43(11), 4241-4245. https://doi.org/10.1007/s11664-014-3342-8

We report the electrical behavior of undoped zinc oxide thin-film transistors (TFTs) fabricated by low-temperature chemical spray pyrolysis. An aerosol system utilizing aerodynamic focusing was used to deposit the ZnO. Polycrystalline films were subs... Read More about Zinc oxide thin-film transistors fabricated at low temperature by chemical spray pyrolysis.

UV-assisted low temperature oxide dielectric films for TFT applications (2014)
Journal Article
Hwang, J., Lee, K., Jeong, J., Lee, Y., Pearson, C., Petty, M., & Kim, H. (2014). UV-assisted low temperature oxide dielectric films for TFT applications. Advanced Materials Interfaces, 1(8), Article 1400206. https://doi.org/10.1002/admi.201400206

Solution-based oxide gate dielectric layers are prepared from metal nitrates using UV-assisted annealing at 150 °C. The leakage current densities of ZrO2 and Al2O3 dielectrics are less than about 10-9 A/cm2 at 1 MV/cm and comparable to those formed b... Read More about UV-assisted low temperature oxide dielectric films for TFT applications.

Evolution-in-materio: solving function optimization problems using materials (2014)
Conference Proceeding
Mohid, M., Miller, J., Harding, S., Tufte, G., Lykkebo, O., Massey, M., & Petty, M. (2014). Evolution-in-materio: solving function optimization problems using materials. In Computational Intelligence (UKCI) : 2014 14th UK Workshop on, 8-10 September 2014, Bradford, UK ; proceedings (1-8). https://doi.org/10.1109/ukci.2014.6930152

Evolution-in-materio (EIM) is a method that uses artificial evolution to exploit properties of materials to solve computational problems without requiring a detailed understanding of such properties. In this paper, we show that using a purpose-built... Read More about Evolution-in-materio: solving function optimization problems using materials.

Logic gate and circuit training on randomly dispersed carbon nanotubes (2014)
Journal Article
Kotsialos, A., Massey, M., Qaiser, F., Zeze, D., Pearson, C., & Petty, M. (2014). Logic gate and circuit training on randomly dispersed carbon nanotubes. International Journal of Unconventional Computing, 10(5-6), 473-497

This paper presents results of computations based on threshold logic performed by a thin solid film, following the general principle of evolution in materio. The electrical conductivity is used as the physical property manipulated for evolving Boolea... Read More about Logic gate and circuit training on randomly dispersed carbon nanotubes.

Effects of hydrogen plasma treatment on the electrical behavior of solution-processed ZnO transistors (2014)
Journal Article
Jeong, Y., Pearson, C., Lee, Y., Ahn, K., Cho, C., Hwang, J., …Petty, M. (2014). Effects of hydrogen plasma treatment on the electrical behavior of solution-processed ZnO transistors. Journal of Applied Physics, 116(7), Article 074509. https://doi.org/10.1063/1.4893470

The effects of hydrogen plasma treatment on the active layer of top-contact zinc oxide thin film transistors are reported. The transfer characteristics of the reference devices exhibited large hysteresis effects and an increasing positive threshold v... Read More about Effects of hydrogen plasma treatment on the electrical behavior of solution-processed ZnO transistors.