Determination of the adhesion energy of graphene on SiC(0001) via measurement of pleat defects

Wells, G.H.; Hopf, T.; Vassilevski, K.V.; Escobedo-Cousin, E.; Wright, N.G.; Horsfall, A.B.; Goss, J.P.; O'Neill, A.G.; Hunt, M.R.C.

doi:10.1063/1.4901941

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Determination of the adhesion energy of graphene on SiC(0001) via measurement of pleat defects (2014)
Journal Article
Wells, G., Hopf, T., Vassilevski, K., Escobedo-Cousin, E., Wright, N., Horsfall, A., …Hunt, M. (2014). Determination of the adhesion energy of graphene on SiC(0001) via measurement of pleat defects. Applied Physics Letters, 105(19), Article 193109. https://doi.org/10.1063/1.4901941

Pleat defects in graphene grown on SiC(0001) were studied and used to determine the adhesion energy between few-layer graphene (3 ± 1 monolayers) and the substrate. An adhesion energy of 3.0±1.61.0J/m2 was determined using a continuum model describin... Read More about Determination of the adhesion energy of graphene on SiC(0001) via measurement of pleat defects.