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In situ X-ray topography studies during the molecular beam epitaxy growth of InGaAs on (001) GaAs: effects of substrate dislocation distribution on strain relaxation (1995)
Journal Article
Barnett, S., Keir, A., Cullis, A., Johnson, A., Jefferson, J., Smith, G., …Castelli, C. (1995). In situ X-ray topography studies during the molecular beam epitaxy growth of InGaAs on (001) GaAs: effects of substrate dislocation distribution on strain relaxation. Journal of Physics D: Applied Physics, 28, A17-A22

Simulation Of X-ray Reflection Topographs From Misfit Dislocations (1994)
Journal Article
Spirkl, W., Tanner, B., Whitehouse, C., Barnett, S., Cullis, A., Johnson, A., …Lunn, B. (1994). Simulation Of X-ray Reflection Topographs From Misfit Dislocations. Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 69, 221-236