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X-ray topography of lattice relaxation in strained layer semiconductors: post-growth studies and a new facility for in situ topography during MBE growth

Barnett, S.J.; Whitehouse, C.R.; Keir, A.M.; Clark, G.F.; Usher, B.; Tanner, B.K.; Emeny, M.T.; Johnson, A.D.

Authors

S.J. Barnett

C.R. Whitehouse

A.M. Keir

G.F. Clark

B. Usher

M.T. Emeny

A.D. Johnson



Citation

Barnett, S., Whitehouse, C., Keir, A., Clark, G., Usher, B., Tanner, B., …Johnson, A. (1993). X-ray topography of lattice relaxation in strained layer semiconductors: post-growth studies and a new facility for in situ topography during MBE growth. Journal of Physics D: Applied Physics, 26, A45-A49

Journal Article Type Article
Publication Date 1993
Journal Journal of Physics D Applied Physics
Print ISSN 0022-3727
Publisher IOP Publishing
Volume 26
Pages A45-A49
Publisher URL http://adsabs.harvard.edu/cgi-bin/nph-bib_query?bibcode=1993JPhD...26A..45B&db_key=PHY


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