P.J. Halfpenny
X-ray topography studies of the defect depth profile in processed silicon wafers
Halfpenny, P.J.; Green, G.S.; Tanner, B.K.
Citation
Halfpenny, P., Green, G., & Tanner, B. (1993). X-ray topography studies of the defect depth profile in processed silicon wafers. Journal of Physics D: Applied Physics, 26, A65-A68
| Journal Article Type | Article |
|---|---|
| Publication Date | 1993 |
| Journal | Journal of Physics D Applied Physics |
| Print ISSN | 0022-3727 |
| Electronic ISSN | 1361-6463 |
| Publisher | IOP Publishing |
| Volume | 26 |
| Pages | A65-A68 |
| Public URL | https://durham-repository.worktribe.com/output/1587567 |
| Publisher URL | http://adsabs.harvard.edu/cgi-bin/nph-bib_query?bibcode=1993JPhD...26A..65H&db_key=PHY |
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