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In situ X-ray topography studies during the molecular beam epitaxy growth of InGaAs on (001) GaAs: effects of substrate dislocation distribution on strain relaxation

Barnett, S.J.; Keir, A.M.; Cullis, A.G.; Johnson, A.D.; Jefferson, J.; Smith, G.W.; Martin, T.; Whitehouse, C.R.; Lacey, G.; Clark, G.F.; Tanner, B.K.; Spirkl, W.; Lunn, B.; Hogg, J.C.H.; Ashu, P.; Hagston, W.E.; Castelli, C.M.

Authors

S.J. Barnett

A.M. Keir

A.G. Cullis

A.D. Johnson

J. Jefferson

G.W. Smith

T. Martin

C.R. Whitehouse

G. Lacey

G.F. Clark

W. Spirkl

B. Lunn

J.C.H. Hogg

P. Ashu

W.E. Hagston

C.M. Castelli



Citation

Barnett, S., Keir, A., Cullis, A., Johnson, A., Jefferson, J., Smith, G., …Castelli, C. (1995). In situ X-ray topography studies during the molecular beam epitaxy growth of InGaAs on (001) GaAs: effects of substrate dislocation distribution on strain relaxation. Journal of Physics D: Applied Physics, 28, A17-A22

Journal Article Type Article
Publication Date 1995
Journal Journal of Physics D Applied Physics
Print ISSN 0022-3727
Publisher IOP Publishing
Volume 28
Pages A17-A22
Publisher URL http://adsabs.harvard.edu/cgi-bin/nph-bib_query?bibcode=1995JPhD...28A..17B&db_key=PHY


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