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Determination of the critical thickness of misfit dislocation multiplication using in situ double-crystal x-ray diffraction

Möck, P.; Tanner, B.K.; Li, C.R.; Keir, A.M.; Johnson, A.D.; Lacey, G.; Clark, G.F.; Lunn, B.; Hogg, J.C.H.

Authors

P. Möck

C.R. Li

A.M. Keir

A.D. Johnson

G. Lacey

G.F. Clark

B. Lunn

J.C.H. Hogg



Citation

Möck, P., Tanner, B., Li, C., Keir, A., Johnson, A., Lacey, G., …Hogg, J. (1996). Determination of the critical thickness of misfit dislocation multiplication using in situ double-crystal x-ray diffraction. Semiconductor Science and Technology, 11, 1051-1055

Journal Article Type Article
Publication Date 1996
Journal Semiconductor Science and Technology
Print ISSN 0268-1242
Publisher IOP Publishing
Volume 11
Pages 1051-1055
Public URL https://durham-repository.worktribe.com/output/1611149
Publisher URL http://adsabs.harvard.edu/cgi-bin/nph-bib_query?bibcode=1996SeScT..11.1051M&db_key=PHY



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