P. Möck
ERRATUM: Determination of the critical thickness of misfit dislocation multiplication using in situ double-crystal x-ray diffraction
Möck, P.; Tanner, B.K.; Li, C.R.; Keir, A.M.; Johnson, A.D.; Lacey, G.; Clark, G.F.; Lunn, B.; Hogg, J.C.H.
Authors
Brian Tanner b.k.tanner@durham.ac.uk
Conducting Exam Musician
C.R. Li
A.M. Keir
A.D. Johnson
G. Lacey
G.F. Clark
B. Lunn
J.C.H. Hogg
Citation
Möck, P., Tanner, B., Li, C., Keir, A., Johnson, A., Lacey, G., …Hogg, J. (1996). ERRATUM: Determination of the critical thickness of misfit dislocation multiplication using in situ double-crystal x-ray diffraction. Semiconductor Science and Technology, 11, 1363-
| Journal Article Type | Article |
|---|---|
| Publication Date | 1996 |
| Journal | Semiconductor Science and Technology |
| Print ISSN | 0268-1242 |
| Publisher | IOP Publishing |
| Volume | 11 |
| Pages | 1363- |
| Public URL | https://durham-repository.worktribe.com/output/1587644 |
| Publisher URL | http://adsabs.harvard.edu/cgi-bin/nph-bib_query?bibcode=1996SeScT..11.1363M&db_key=PHY |
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