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ERRATUM: Determination of the critical thickness of misfit dislocation multiplication using in situ double-crystal x-ray diffraction

Möck, P.; Tanner, B.K.; Li, C.R.; Keir, A.M.; Johnson, A.D.; Lacey, G.; Clark, G.F.; Lunn, B.; Hogg, J.C.H.

Authors

P. Möck

C.R. Li

A.M. Keir

A.D. Johnson

G. Lacey

G.F. Clark

B. Lunn

J.C.H. Hogg



Citation

Möck, P., Tanner, B., Li, C., Keir, A., Johnson, A., Lacey, G., …Hogg, J. (1996). ERRATUM: Determination of the critical thickness of misfit dislocation multiplication using in situ double-crystal x-ray diffraction. Semiconductor Science and Technology, 11, 1363-

Journal Article Type Article
Publication Date 1996
Journal Semiconductor Science and Technology
Print ISSN 0268-1242
Publisher IOP Publishing
Volume 11
Pages 1363-
Public URL https://durham-repository.worktribe.com/output/1587644
Publisher URL http://adsabs.harvard.edu/cgi-bin/nph-bib_query?bibcode=1996SeScT..11.1363M&db_key=PHY



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